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Process to season and determine condition of a high density plasma etcher

  • US 6,267,121 B1
  • Filed: 02/11/1999
  • Issued: 07/31/2001
  • Est. Priority Date: 02/11/1999
  • Status: Expired due to Term
First Claim
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1. A process for seasoning a high density plasma etcher having walls, comprising:

  • providing a single blank silicon wafer;

    placing said silicon wafer within said plasma etcher;

    admitting into the etcher a mixture of chlorine, oxygen, and helium at a flow rate and at a pressure;

    through application of RF power to said silicon wafer for a period of time, electrically exciting said gas whereby a high density plasma is formed;

    during said time period, also applying RF bias power to the walls; and

    turning off all RF power thereby completing said seasoning process.

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