Subresolution grating for attenuated phase shifting mask fabrication

• US 6,268,091 B1
• Filed: 03/28/2000
• Issued: 07/31/2001
• Est. Priority Date: 01/08/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Pierrat, Christophe
• Primary Examiner(s): Rosasco, S.
• Application Number:
  US09/536,947
• Time in Patent Office: 490 Days
• Field of Search: 430/5, 430/322, 250/226, 354/888
• US Class Current: 430/5
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns

Abstract

A subresolution grating composed of approximately circular contacts is fabricated around the border of the primary pattern of a photomask. As a result, resolution at the edges of the photomask pattern is improved when the pattern is printed on a wafer surface. In addition, the reduced leakage enables a more efficient use of the glass plate on which the photomask is fabricated as well as a more efficient use of the wafer surface as a result of being able to place patterns closer together.

Claims

1. A photomask comprising:

a primary pattern; and

a diffraction grating about the primary pattern, the diffraction grating including contact shapes approximating a circle, the contact shapes being less than 0.11 microns in diameter.

2. The photomask of claim 1 wherein the contact shapes are substantially octagonal.

3. A photomask comprising:

a primary pattern; and

a diffraction grating outside the primary pattern, the diffraction grating having octagonal contacts each with a diameter, the octagonal contacts being separated from each other by a distance substantially equal to the diameter.

4. The photomask of claim 3 wherein the diameter is less than 0.11 microns.

5. The photomask of claim 3 wherein the diameter is subresolution.

6. A photomask comprising:

a primary pattern; and

a diffraction grating outside the primary pattern, the diffraction grating including approximately circular contacts having substantially equal diameters and distances therebetween, the diameters and distances being less than 0.11 microns.

7. The photomask of claim 6 wherein the diffraction grating comprises absorptive material.

8. A method of fabricating a border surrounding the primary pattern of a photomask comprising depositing a pattern of attenuating material on the photomask, the pattern including substantially circular contact shapes having a diameter of less than 0.11 micron.

9. The method of claim 8 wherein the substantially circular contact shapes have a diameter, and distance between the substantially circular contact shapes is substantially equal to the diameter.

10. A method of fabricating a border surrounding the primary pattern of a photomask comprising depositing a pattern of attenuating material on the photomask, the pattern including contact shapes that approximate a circle having a diameter of less than 0.11 micron.

11. The method of claim 10 wherein the diameter of the contact shapes is approximately equal to a distance between contact shapes.

12. A method of fabricating a border surrounding the primary pattern of a photomask comprising depositing a pattern of attenuating material on the photomask, the pattern including octagonal contact shapes.

13. The method of claim 12 wherein depositing comprises depositing a pattern of octagonal shapes having a diameter and a separation distance, the diameter and separation distance being substantially equal.

14. A method of projecting a pattern on a wafer comprising projecting light through a photomask having a diffraction grating about a perimeter of a primary pattern, the diffraction grating comprising octagonal contacts.

15. The method of claim 14 wherein the octagonal contacts have a diameter and a distance therebetween, the diameter and the distance being substantially equal.

16. A semiconductor die made using a process that includes the method of claim 14.

17. A method of projecting a pattern on a wafer comprising projecting light through a photomask having a diffraction grating that includes octagonal features at equidistant intervals.

18. The method of claim 17 wherein the photomask comprises phase-shifting material.

19. A method of projecting a pattern on a wafer comprising projecting light through a photomask having a diffraction grating that includes substantially circular features at equidistant intervals.

20. The method of claim 19 wherein the substantially circular features have a diameter substantially equal to the equidistant intervals.

21. A method of projecting a pattern on a wafer comprising:

projecting light through a photomask having a diffraction grating that includes substantially circular features at equidistant intervals of less than 0.11 micron, the substantially circular features having diameters equal to the intervals;

stepping the photomask across a plurality of locations on the wafer; and

for each of the plurality of locations on the wafer, projecting light through the photomask.

22. A semiconductor die made using a process that includes the method of claim 21.