Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer

• US 6,268,224 B1
• Filed: 06/30/1998
• Issued: 07/31/2001
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Miller, Gayle W., Chisholm, Michael F.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/108,091
• Time in Patent Office: 1,127 Days
• Field of Search: 456/345, 451/6, 451/5, 451/41, 451/287, 216/88, 216/89, 216/86, 438/692, 438/693, 438/10, 438/17
• US Class Current: 438/10
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A method of fabricating a semiconductor wafer having a polishing endpoint layer which is formed by implanting ions into the wafer includes the step of polishing the wafer in order to remove material from the wafer. The method also includes the step of detecting a first change in friction when material of the ion-implanted polishing endpoint layer begins to be removed during the polishing step. The method further includes the step of detecting a second change in friction when material of the ion-implanted polishing endpoint layer ceases to be removed during the polishing step. Moreover, the method includes the step of terminating the polishing step in response to detection of the second change in friction. An apparatus for polishing a semiconductor wafer down to an ion-implanted polishing endpoint layer in the wafer is also disclosed.

Claims

1. A method of fabricating a semiconductor wafer, comprising the steps of:

implanting ions into said wafer so as to form a polishing endpoint layer in said wafer, said ion-implanted polishing endpoint layer having a first outer level and a second outer level;

polishing said wafer in order to remove material from said wafer;

detecting a first change in friction when material of said ion-implanted polishing endpoint layer begins to be removed during said polishing step so as to determine that said wafer has been polished to said first outer level of said ion-implanted polishing endpoint layer;

detecting a second change in friction when material of said ion-implanted polishing endpoint layer ceases to be removed during said polishing step so as to determine that said wafer has been polished to said second outer level of said ion-implanted polishing endpoint layer; and

terminating said polishing step in response to detection of said second change in friction.

2. The method of claim 1, wherein said implanting step includes the step of implanting ions into said wafer such that said ion-implanted polishing endpoint layer is formed at a predetermined distance from a substrate of said wafer.

3. The method of claim 1, wherein:

said implanting step includes the step of implanting ions through a first side of said wafer so as to form said ion-implanted polishing layer at a predetermined distance from said first side of said wafer, and

said polishing step includes the step of polishing said first side of said wafer to remove material therefrom.

4. The method of claim 1, wherein:

said polishing step includes the step of rotating said wafer with a wafer motor,

said first change detecting step includes the step of detecting a first difference in current drawn by said wafer motor which corresponds to said wafer having been polished to said first outer level of said ion-implanted polishing endpoint layer, and

said second change detecting step includes the step of detecting a second difference in current drawn by said wafer motor which corresponds to said wafer having been polished to said second outer level of said ion-implanted polishing endpoint layer.

5. The method of claim 4, wherein:

said step of detecting said first difference in current drawn by said wafer motor includes the step of detecting an increase in current drawn by said wafer motor, and

said step of detecting said second difference in current drawn by said wafer motor includes the step of detecting a reduction in current drawn by said wafer motor.

6. The method of claim 1, wherein all of said ion-implanted polishing endpoint layer is substantially removed from said wafer when said wafer has been polished to said second outer level of said ion-implanted polishing endpoint layer.

7. The method of claim 1, wherein said terminating step includes the step of terminating said polishing step in response to detection of both said first change in friction and said second change in friction.

8. A method of fabricating a semiconductor wafer having a polishing endpoint layer which is formed by implanting ions into said wafer, comprising the steps of:

polishing said wafer in order to remove material from said wafer;

detecting a first change in friction when material of said ion-implanted polishing endpoint layer begins to be removed during said polishing step;

detecting a second change in friction when material of said ion-implanted polishing endpoint layer ceases to be removed during said polishing step; and

terminating said polishing step in response to detection of said second change in friction.

9. The method of claim 8, wherein said ion-implanted polishing endpoint layer is formed at a predetermined distance from a substrate of said wafer.

10. The method of claim 8, wherein said terminating step includes the step of terminating said polishing step in response to detection of both said first change in friction and said second change in friction.

11. The method of claim 8, wherein:

said ion-implanted polishing endpoint layer is formed by implanting ions through a first side of said wafer at a predetermined distance from said first side of said wafer, and

said polishing step includes the step of polishing said first side of said wafer to remove material therefrom.

12. The method of claim 8, wherein:

said ion-implanted polishing endpoint layer has a first outer level and a second outer level,

said first change in friction detecting step includes the step of detecting said first change in friction when material of said ion-implanted polishing endpoint layer begins to be removed during said polishing step so as to determine that said wafer has been polished to said first outer level of said ion-implanted polishing endpoint layer, and

said second change in friction detecting step includes the step of detecting said second change in friction when material of said ion-implanted polishing endpoint layer ceases to be removed during said polishing step so as to determine that said wafer has been polished to said second outer level of said ion-implanted polishing endpoint layer.

13. The method of claim 12, wherein:

said polishing step includes the step of rotating said wafer with a wafer motor,

said first change detecting step includes the step of detecting a first difference in current drawn by said wafer motor which corresponds to said wafer having been polished to said first outer level of said ion-implanted polishing endpoint layer; and

said second change detecting step includes the step of detecting a second difference in current drawn by said wafer motor which corresponds to said wafer having been polished to said second outer level of said ion-implanted polishing endpoint layer.

14. The method of claims 13, wherein:

said step of detecting said first difference in current drawn by said wafer motor includes the step of detecting an increase in current drawn by said wafer motor, and

said step of detecting said second difference in current drawn by said wafer motor includes the step of detecting a reduction in current drawn by said wafer motor.

15. The method of claim 12, wherein all of said ion-implanted polishing endpoint layer is substantially removed from said wafer when said wafer has been polished to said second outer level of said ion-implanted polishing endpoint layer.