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Methods of forming memory cell capacitor plates in memory cell capacitor structures

  • US 6,268,260 B1
  • Filed: 03/31/1999
  • Issued: 07/31/2001
  • Est. Priority Date: 03/31/1999
  • Status: Expired due to Term
First Claim
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1. A method of forming a memory cell capacitor structure, comprising:

  • depositing a first sacrificial layer over a substrate;

    forming a first opening in said first sacrificial layer;

    depositing a first electrode material layer over a top surface of said first sacrificial layer completely filling said first opening, wherein said first electrode material layer includes a substantially conductive material that remains substantially conductive upon exposure to oxygen;

    removing a portion of said first electrode material layer over down to at least about a level of said top surface of said first sacrificial layer to define a top surface of a first memory cell capacitor plate;

    depositing a second sacrificial layer over the top surface of the first memory cell capacitor plate and the first sacrificial layer;

    forming a second opening in said second sacrificial layer so that the second opening extends to the first memory cell capacitor plate;

    depositing a dielectric layer over a top surface of said second sacrificial layer and at least partially filling said second opening, said dielectric layer having electrical contact with said first memory cell capacitor plate;

    removing a portion of said dielectric layer over down to at least about a level of said top surface of said second sacrificial layer to define a top surface of a memory cell capacitor storage element;

    removing said second sacrificial layer;

    removing said first sacrificial layer; and

    forming a second memory cell capacitor plate over said memory cell capacitor storage element.

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