Methods of forming memory cell capacitor plates in memory cell capacitor structures
First Claim
1. A method of forming a memory cell capacitor structure, comprising:
- depositing a first sacrificial layer over a substrate;
forming a first opening in said first sacrificial layer;
depositing a first electrode material layer over a top surface of said first sacrificial layer completely filling said first opening, wherein said first electrode material layer includes a substantially conductive material that remains substantially conductive upon exposure to oxygen;
removing a portion of said first electrode material layer over down to at least about a level of said top surface of said first sacrificial layer to define a top surface of a first memory cell capacitor plate;
depositing a second sacrificial layer over the top surface of the first memory cell capacitor plate and the first sacrificial layer;
forming a second opening in said second sacrificial layer so that the second opening extends to the first memory cell capacitor plate;
depositing a dielectric layer over a top surface of said second sacrificial layer and at least partially filling said second opening, said dielectric layer having electrical contact with said first memory cell capacitor plate;
removing a portion of said dielectric layer over down to at least about a level of said top surface of said second sacrificial layer to define a top surface of a memory cell capacitor storage element;
removing said second sacrificial layer;
removing said first sacrificial layer; and
forming a second memory cell capacitor plate over said memory cell capacitor storage element.
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Abstract
An improved method of forming a memory cell capacitor plate is disclosed. The method of forming a memory cell capacitor plate comprises the steps of depositing a sacrificial layer and forming an opening in the sacrificial layer. Then an electrode material layer which includes a substantially conductive material that remains substantially conductive upon exposure to oxygen is deposited over a top surface of the sacrificial layer and at least partially filling the opening. The method continues with removing a portion of the electrode material layer down to at least about a level of the sacrificial layer'"'"'s top surface to define a top surface of the memory cell capacitor plate, followed by removal of the sacrificial layer.
19 Citations
12 Claims
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1. A method of forming a memory cell capacitor structure, comprising:
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depositing a first sacrificial layer over a substrate;
forming a first opening in said first sacrificial layer;
depositing a first electrode material layer over a top surface of said first sacrificial layer completely filling said first opening, wherein said first electrode material layer includes a substantially conductive material that remains substantially conductive upon exposure to oxygen;
removing a portion of said first electrode material layer over down to at least about a level of said top surface of said first sacrificial layer to define a top surface of a first memory cell capacitor plate;
depositing a second sacrificial layer over the top surface of the first memory cell capacitor plate and the first sacrificial layer;
forming a second opening in said second sacrificial layer so that the second opening extends to the first memory cell capacitor plate;
depositing a dielectric layer over a top surface of said second sacrificial layer and at least partially filling said second opening, said dielectric layer having electrical contact with said first memory cell capacitor plate;
removing a portion of said dielectric layer over down to at least about a level of said top surface of said second sacrificial layer to define a top surface of a memory cell capacitor storage element;
removing said second sacrificial layer;
removing said first sacrificial layer; and
forming a second memory cell capacitor plate over said memory cell capacitor storage element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
depositing a third sacrificial layer over the second sacrificial layer and the top surface of a memory cell capacitor storage element;
forming a third opening in said third sacrificial layer;
depositing a second electrode material layer over a top surface of said third sacrificial layer and at least partially filling said third opening, said second electrode material layer including a substantially conductive material that remains substantially conductive upon exposure to oxygen, and said second electrode material layer having electrical contact with said memory cell capacitor storage element;
removing a portion of said second electrode material layer over down to at least about a level of said top surface of said third sacrificial layer to define a top surface of said second memory cell capacitor plate; and
removing said third sacrificial layer.
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5. The method of claim 1, further comprising:
- depositing an encapsulating material layer over said memory cell capacitor structure.
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6. The method of claim 1, further comprising:
- depositing a boundary layer over said substrate.
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7. The method of claim 6, wherein said boundary layer functions as an etch stop layer.
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8. The method of claim 6, wherein said boundary layer functions as a diffusion barrier layer.
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9. The method of claim 6, where in said boundary layer includes one of titanium nitride and silicon nitride.
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10. The method of claim 1, where in said removing of said portion of said electrode material layer is accomplished by a planarizing process.
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11. The method of claim 10, wherein said planarizing process is a chemical mechanical polishing (CMP) process.
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12. The method of 1, wherein said dielectric layer includes a ferroelectric material.
Specification