Method of fabricating MOSFET with lateral resistor with ballasting
First Claim
1. A method of fabricating a transistor including the steps offorming a relatively high resistance phase state of salicide on respective portions of source/drain regions of said transistor, forming first and second salicide formations, and converting said first salicide formation to a relatively low resistance phase state of salicide while inhibiting conversion of said second salicide formation to a relatively low resistance phase state.
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Accused Products
Abstract
The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduction channel. A distributed resistance is formed by inhibiting conversion of a region of deposited salicide from a high resistance phase state to a low resistance phase state through formation of the deposit with a width or area less than a critical dimension.
33 Citations
10 Claims
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1. A method of fabricating a transistor including the steps of
forming a relatively high resistance phase state of salicide on respective portions of source/drain regions of said transistor, forming first and second salicide formations, and converting said first salicide formation to a relatively low resistance phase state of salicide while inhibiting conversion of said second salicide formation to a relatively low resistance phase state.
Specification