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Method of fabricating MOSFET with lateral resistor with ballasting

  • US 6,268,286 B1
  • Filed: 02/01/2000
  • Issued: 07/31/2001
  • Est. Priority Date: 02/01/2000
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a transistor including the steps offorming a relatively high resistance phase state of salicide on respective portions of source/drain regions of said transistor, forming first and second salicide formations, and converting said first salicide formation to a relatively low resistance phase state of salicide while inhibiting conversion of said second salicide formation to a relatively low resistance phase state.

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