Semiconductor protection device and power converting system

• US 6,268,990 B1
• Filed: 06/24/1999
• Issued: 07/31/2001
• Est. Priority Date: 06/26/1998
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hoshi, Kimihiro, Ogura, Tsuneo
• Primary Examiner(s): Sherry, Michael J.
• Assistant Examiner(s): HUYNH, KIM NGOC
• Application Number:
  US09/339,214
• Time in Patent Office: 768 Days
• Field of Search: 361/54, 361/56, 361/111, 361/88, 361/91.5, 361/91.7, 257/355, 257/356, 257/362, 327/306, 327/309, 327/310, 327/313, 327/327
• US Class Current: 361/91.7
• CPC Class Codes: H03K 17/08148 in composite switches

Abstract

A semiconductor protection device is used to suppress a surge voltage to a preset value or less, the surge voltage being caused at each turn-OFF time of 50 Hz to 20 kHz of a main IGBT functioning as a switch of a power converting system. The semiconductor protection device includes a protection IGBT for forming a bypass connected in parallel with the main IGBT and an electric field sensing element connected in a reverse direction between the collector of the main IGBT and the gate of the protection IGBT. When the surge voltage exceeds a preset value which is a breakdown voltage of the electric field sensing element, the protection IGBT is turned ON so as to cause a current generated by energy of the surge voltage to be bypassed.

Claims

1. A semiconductor protection device for suppressing an application voltage containing a surge voltage to a preset value or less, the surge voltage occurring at a turn-OFF phase of a main semiconductor switch having first and second main electrodes and a control electrode, said protection device comprising:

a switching element configured to form a bypass which is connected in parallel with said main semiconductor switch and opened/closed depending on said preset value, said switching element having first and second terminals arranged to be respectively connected to said first and second main electrodes and a control terminal configured to control conduction of a path between said first and second terminals; and

a voltage setting element connected to said control terminal and configured to set said preset value,

wherein said voltage setting element sets said preset value to 100% to 150% of a circuit voltage applied between said first and second main electrodes, and applies a voltage caused by energy of the application voltage to said control terminal when the application voltage exceeds said preset value, to make said path between said first and second terminals conductive so as to open said bypass parallel with said main semiconductor switch, and

wherein said voltage setting element includes an electric field sensing element connected between said first main electrode and said control terminal, said electric field sensing element including a first semiconductor region, an input electrode connected to said first semiconductor region and said first main electrode, and an output electrode disposed on said first semiconductor region through an insulating film and connected to said control terminal, such that said first semiconductor region is depleted by use of an electric field generated by the application voltage and applied through said input electrode, and thus said output electrode forms a capacitive coupling with said input electrode to apply a voltage caused by energy of the application voltage to said control terminal, when the application voltage exceeds said preset value.

2. The device according to claim 1, wherein said switching element has a MOS structure having a gate used as said control terminal.

3. The device according to claim 2, wherein said switching element includes an IGBT and said first and second terminals and said control terminal correspond to a collector, emitter and gate of said IGBT.

4. The device according to claim 1, wherein said voltage setting element is capable of changing said preset value.

5. The device according to claim 4, wherein said voltage setting element further includes a variable power supply connected to said electric field sensing element, and said variable power supply is capable of changing said preset value by changing a bias voltage applied to said electric field sensing element.

6. The device according to claim 1, wherein said main semiconductor switch is turned ON/OFF at 50 Hz to 20 kHz.

7. The device according to claim 1, further comprising an excessive current protection section connected in parallel with said main semiconductor switch and said switching element, said excessive current protection section including a switching element for turning OFF said main semiconductor switch when a current flowing in said main semiconductor switch exceeds a current threshold value.

8. The device according to claim 7, wherein said switching element of said excessive current protection section short-circuits said second main electrode to said control electrode to turn OFF said main semi-conductor switch when the current flowing in said main semiconductor switch exceeds said current threshold value.

9. The device according to claim 1, wherein said switching element and said voltage setting element are arranged on one semiconductor substrate.

10. The device according to claim 1, wherein said main semiconductor switch, said switching element and said voltage setting element are arranged on one semiconductor substrate.

11. The device according to claim 1, wherein said device is configured to handle said surge voltage occurring substantially at each turn-OFF phase of said main semiconductor switch.

12. A power converting system comprising a plurality of switching circuits connected in parallel or in series, each of said switching circuits comprising:

a main semiconductor switch having first and second main electrodes and a control electrode; and

a semiconductor protection device configured to suppress an application voltage containing a surge voltage to a preset value or less, the surge voltage occurring at a turn-OFF phase of said main semiconductor switch,

wherein said protection device includes;

a switching element configured to form a bypass which is connected in parallel with said main semiconductor switch and opened/closed depending on said preset value, said switching element having first and second terminals arranged to be respectively connected to said first and second main electrodes and a control terminal configured to control conduction of a path between said first and second terminals, and

a voltage setting element connected to said control terminal and configured to set said preset value,

wherein said voltage setting element sets said preset value to 100% to 150% of a circuit voltage applied between said first and second main electrodes, and applies a voltage caused by energy of the application voltage to said control terminal when the application voltage exceeds said preset value, to make said path between said first and second terminals conductive so as to open said bypass parallel with said main semiconductor switch, and

wherein said voltage setting element includes an electric field sensing element connected between said first main electrode and said control terminal, said electric field sensing element including a first semiconductor region, an input electrode connected to said first semiconductor region and said first main electrode, and an output electrode disposed on said first semiconductor region through an insulating film and connected to said control terminal, such that said first semiconductor region is depleted by use of an electric field generated by the application voltage and applied through said input electrode, and thus said output electrode forms a capacitive coupling with said input electrode to apply a voltage caused by energy of the application voltage to said control terminal, when the application voltage exceeds said preset value.

13. The system according to claim 12, wherein said protection device further includes an excessive voltage rising rate protection section connected in parallel with said main semiconductor switch and said switching element, said excessive voltage rising rate protection section including a capacitor which is discharged/ charged according to turn-ON/OFF of said main semiconductor switch.

14. The system according to claim 13, wherein said excessive voltage rising rate protection section further includes a rectifier element and a resistor connected in parallel with each other and connected between said first main electrode and said capacitor.

15. The system according to claim 13, wherein said main semiconductor switch comprises a thyristor.

16. The system according to claim 12, wherein said main semiconductor switch and said protection device of each of said switching circuits are received in a common package capable of being cooled.

17. The system according to claim 12, wherein said main semiconductor switch and said protection device of each of said switching circuits are received in different packages each capable of being cooled.

18. The system according to claim 12, wherein said main semiconductor switch includes a plurality of main switching elements connected in parallel.

19. The system according to claim 12, wherein said main semiconductor switch includes a plurality of main switching elements connected in series.

20. The system according to claim 19, further comprising capacitors respectively connected in parallel with said main semiconductor switches.

21. The system according to claim 19, further comprising a common capacitor connected in parallel with said main semiconductor switches.

22. The system according to claim 12, wherein said main semiconductor switches are turned ON/OFF at 50 Hz to 20 kHz.

23. The system according to claim 12, wherein said device is configured to handle said surge voltage occurring substantially at each turn-OFF phase of said main semiconductor switch.