Ferroelectric memory device capable of adjusting bit line capacitance

• US 6,269,019 B1
• Filed: 10/20/2000
• Issued: 07/31/2001
• Est. Priority Date: 10/21/1999
• Status: Expired due to Term

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Kasai, Masanori
• Primary Examiner(s): Tran, Andrew Q.
• Application Number:
  US09/691,885
• Time in Patent Office: 284 Days
• Field of Search: 365/145, 365/225.7, 365/207, 365/190
• US Class Current: 365/145
• CPC Class Codes: G11C 11/22 using ferroelectric elements

Abstract

Bit line capacitance variation devices are respectively connected to the bit lines contained in a ferroelectric memory device. These bit line capacitance variation devices change the capacitance of bit lines according to the bit line potential during operations for reading data from the ferroelectric memory device.

Claims

1. A ferroelectric memory device, comprising:

a plurality of word lines, a plurality of plate lines, a plurality of bit lines, and a plurality of memory cells, wherein said memory cells comprise ferroelectric capacitors and selection transistors; and

said ferroelectric memory device further comprising;

a bit line capacitance variation device which changes the bit line capacitance according to the potential of said bit lines.

2. A ferroelectric memory device according to claim 1, wherein said bit line capacitance variation device comprises a PMOS transistor the gate electrode of which is connected to said bit line, and which is used as a P-type MOS capacitor.

3. A ferroelectric memory device according to claim 1, wherein said bit line capacitance variation device is constituted from either one or a plurality of variable elements, wherein said variable elements each comprise a switch connected to said bit line, and a PMOS transistor the gate electrode of which is connected to said bit line via said switch, and which is used as a P-type MOS capacitor.

4. A ferroelectric memory device according to claim 3, wherein said switches are constituted from CMOS transfer gates.

5. A ferroelectric memory device according to claim 3, wherein said switches are constituted from metal fuses.

6. A ferroelectric memory device according to claim 1, wherein said bit line capacitance variation device comprises an NMOS transistor the gate electrode of which is connected to said bit line, and which is used as an N-type MOS capacitor.

7. A ferroelectric memory device according to claim 1, wherein said bit line capacitance variation device is constituted from either one or a plurality of variable elements, wherein said variable elements each comprise a switch connected to said bit line, and an NMOS transistor the gate electrode of which is connected to said bit line via said switch, and which is used as a N-type MOS capacitor.

8. A ferroelectric memory device according to claim 7, wherein said switches are constituted from CMOS transfer gates.

9. A ferroelectric memory device according to claim 7, wherein said switches are constituted from metal fuses.

10. A ferroelectric memory device according to claim 1, wherein the main current paths of said selection transistors and said ferroelectric capacitors are connected in series between said bit lines and said plate lines, in order from the side of said bit lines, and the control electrodes of said selection transistors are connected to said word lines.

11. A ferroelectric memory device according to claim 1, wherein readout of data stored in said memory cells is performed by a sense amplifier which detects signals generated in response to the state of polarization of said ferroelectric capacitors.