×

Method for manufacturing thin film using atomic layer deposition

  • US 6,270,572 B1
  • Filed: 08/09/1999
  • Issued: 08/07/2001
  • Est. Priority Date: 08/07/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A thin film manufacturing method comprising:

  • (a) initially injecting a first reactant into a chamber in which a substrate with chemisorption sites on its surface is loaded, thereby chemically adsorbing a first portion of the first reactant onto the surface of the substrate;

    (b) removing physisorbed first reactant from the chamber to expose unfilled chemisorption sites on the surface of the substrate;

    (c) re-injecting the first reactant into the chamber, thereby chemically adsorbing a second portion of the first reactant onto the unfilled chemisorption sites on the surface of the substrate;

    (d) removing physisorbed first reactant from the chemically adsorbed first reactant;

    (e) injecting a second reactant into the chamber, thereby chemically adsorbing a first portion of the second reactant onto the surface of the substrate and forming a first portion of a monolayer solid thin film by chemical exchange;

    (f) removing physisorbed second reactant from the chemically adsorbed first reactant and the chemically adsorbed second reactant; and

    (g) re-injecting the second reactant into the chamber, thereby chemically adsorbing a second portion of the second reactant onto the surface of substrate and forming a second portion of the monolayer solid thin film by chemical exchange.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×