Method for improved remote microwave plasma source for use with substrate processing system
First Claim
1. A method for plasma processing using an apparatus having a conductive plasma applicator, the method comprising:
- introducing said one or more reactive gases at a first rate to a gas inlet of the plasma applicator during a first time period at a first flow rate;
directing microwaves into an internal volume of the applicator during said first time period to ignite a plasma in said applicator; and
permitting radicals generated by the plasma to exit from the applicator through an outlet while containing the microwaves within the applicator.
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Abstract
An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.
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Citations
26 Claims
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1. A method for plasma processing using an apparatus having a conductive plasma applicator, the method comprising:
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introducing said one or more reactive gases at a first rate to a gas inlet of the plasma applicator during a first time period at a first flow rate;
directing microwaves into an internal volume of the applicator during said first time period to ignite a plasma in said applicator; and
permitting radicals generated by the plasma to exit from the applicator through an outlet while containing the microwaves within the applicator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
introducing radicals from said plasma into a substrate processing chamber coupled to the applicator to process a substrate.
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6. The method of claim 1, further comprising:
maintaining the applicator at a selected temperature.
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7. The method of claim 6 wherein said selected temperature is between about 20°
- C. and about 25°
C.
- C. and about 25°
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8. The method of claim 1, wherein the applicator has a rectangular cross section having a width and a height.
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9. The method of claim 8, wherein the width and height are chosen such that the microwaves resonate in a TE10n mode, wherein n is an integer.
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10. The method of claim 1, wherein the applicator has a cylindrical shape characterized by a radius and a length.
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11. The method of claim 10, wherein the radius and length are chosen such that the microwaves resonate in a TE11mode, wherein n is an integer.
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12. The method of claim 1 wherein the microwaves are directed into the internal volume of the applicator at a power level ranging from about 150-500 W.
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13. The method of claim 1 wherein the microwaves are contained within the applicator by providing a microwave arrestor in the outlet of the applicator.
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14. The method of claim 13 wherein the microwave arrestor extends coextensive with a cross-sectional area of the outlet.
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15. A method for plasma processing in a processing chamber, comprising:
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during a first time period introducing one or more reactive gases at a first flow rate to a gas inlet of a conductive plasma applicator coupled to the processing chamber;
maintaining a pressure of about 1-20 torr within the applicator during said first time period;
directing microwaves into an internal volume of the applicator during said first time period at a power level ranging from about 150-500 W to ignite a plasma in said applicator; and
introducing radicals from the plasma through an outlet from the applicator into the processing chamber while containing the microwaves within the applicator. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification