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Thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect and a method for fabricating the same

  • US 6,271,540 B1
  • Filed: 04/29/1999
  • Issued: 08/07/2001
  • Est. Priority Date: 05/01/1998
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor having a gate electrode, a gate insulating film, a silicon layer and source and drain electrodes formed on an insulating substrate in this order comprising:

  • a silicon oxynitride film formed on said silicon layer on a back channel region between said source electrode and said drain electrode; and

    a channel passivation film formed on said silicon oxynitride film wherein said channel passivation film is a silicon nitride film.

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