High isolation RF power amplifier with self-bias attenuator

• US 6,271,727 B1
• Filed: 08/06/1999
• Issued: 08/07/2001
• Est. Priority Date: 08/06/1999
• Status: Expired due to Term

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Schmukler, Bruce C.
• Primary Examiner(s): Lee, Benny
• Assistant Examiner(s): Nguyen, Patricia T.
• Application Number:
  US09/370,116
• Time in Patent Office: 732 Days
• Field of Search: 330/284, 330/285, 333/81.A, 333/81.R
• US Class Current: 330/284
• CPC Class Codes: H03G 1/0058 PIN-diodes

Abstract

A PIN diode attenuator and associated control circuits prevents self-biasing of bipolar device RF power amplifiers under large signal drive conditions. A power amplifier control signal controls the amount of current through the PIN diode attenuator. When the control signal is high for maximum output power, the PIN diode attenuator is turned off to obtain maximum drive level for the first RF stage. When the control signal is low for maximum isolation, the PIN diode attenuator is turned on to reduce the drive level and to avoid self-biasing. The PIN diode attenuator and associated control circuits allow the RF power amplifier to operate normally when the amplifier is in its forward gain mode. The RF input signals to the power amplifier are attenuated however, when the amplifier is turned off or in a transition state between the forward gain mode and the off mode, to ensure a high isolation state that prevents self-biasing of the power amplifier or portions thereof under large signal conditions.

Claims

1. A high isolation RF power amplifier comprising:

a radio frequency (RF) power amplifier having an RF signal input;

a PIN diode electrically coupled to the RF signal input; and

a variable current source having a control signal input and configured to adjust current flow through the PIN diode in response to a control signal to the control signal input, such that RF signals to the RF signal input are not attenuated when the RF power amplifier is in a forward gain mode and such that RF signals to the RF signal input are substantially fully attenuated when the RF power amplifier is in its off mode and further such that RF signals to the RF signal input are variably attenuated when the RF power amplifier is in a transition state between the forward gain mode and the off mode, wherein RF signals to the RF signal input are attenuated to minimize self-biasing associated with the RF power amplifier configured to receive the attenuated RF signals.

2. The RF power amplifier of claim 1 further comprising a switch associated with the PIN diode and configured to selectively enable and disable a current flow through the PIN diode.

3. The RF power amplifier of claim 2 wherein the PIN diode is configured to shunt RF power from the RF signal input to ground when the PIN diode is selectively turned on such that the RF power shunted to ground increases as current through the PIN diode increases.

4. The RF power amplifier of claim 1 wherein the RF power amplifier comprises at least one bipolar transistor.

5. The RF power amplifier of claim 4 wherein the at least one bipolar transistor comprises a heterojunction bipolar transistor (HBT).

6. The RF power amplifier of claim 1 further comprising at least one high frequency bypass capacitor configured to pass predetermined high frequency signals around the associated switch.

7. The RF power amplifier of claim 1 fuirther comprising at least one radio frequency (RF) blocking device configured to block predetermined RF signals to the PIN diode.

8. The RF power amplifier of claim 7 wherein the at least one radio frequency blocking device is selected from the group consisting of a resistor, a radio frequency choke and any combination thereof.

9. The RF power amplifier of claim 1 wherein the variable current source further comprises an inverting amplifier configured to control current flowing to the PIN diode as a function of a variable control voltage.

10. The RF power amplifier of claim 9 wherein the variable current source is further configured to selectively control a slope relationship between the control current flowing to the PIN diode and the variable control voltage.

11. A high isolation RF power amplifier comprising:

a HBT RF power amplifier having a RF signal input;

a diode having an anode and a cathode, the anode electrically coupled to the RF signal input and the cathode electrically coupled to ground;

a variable current source having a power amplifier control voltage input and having a DC current output, the DC current output being electrically coupled to the anode; and

a switching device electrically coupled between the cathode and ground.

12. The RF power amplifier of claim 11 wherein the variable current source comprises an inverting amplifier.

13. The RF power amplifier of claim 11 wherein the switching device comprises a control signal input.

14. The RF power amplifier of claim 11 further comprising a RF signal blocking device electrically coupled between the DC current output and the anode.

15. A high isolation RF power amplifier comprising:

a RF power amplifier having a RF signal input and a RF signal output;

diverting means for diverting a desired portion of a RF signal to ground and away from the RF signal input; and

controlling means for varying the desired RF signal portion diverted to ground in response to a power amplifier control signal to generate an attenuated RF signal such that a predetermined isolation is achieved between the RF signal input and the RF signal output.

16. The RF power amplifier of claim 15 wherein the diverting means comprises a PIN diode.

17. The RF power amplifier of claim 15 wherein the controlling means comprises a variable current source.

18. A high isolation RF amplifier comprising:

a RF amplifier having a RF signal input;

a RF signal path associated with the RE signal input, the RF signal path having a predetermined attenuation characteristic;

current generating means for providing a variable DC current having a value determined by a RF power amplifier control voltage; and

means responsive to the current generating means for changing the attenuation characteristics associated with the RF signal path in response to the variable DC current wherein the attenuation characteristics are dependent upon the value of the DC current necessary to substantially eliminate self-biasing of the RF amplifier when the RF amplifier is not in a forward gain operating mode.

19. The RF power amplifier of claim 18 wherein the means for providing a variable DC current comprises an inverting amplifier responsive to a RF power amplifier control voltage.

20. The RF power amplifier of claim 18 wherein the means for changing the RE signal path attenuation characteristic comprises a PIN diode.

21. A method for eliminating self-biasing in a bipolar radio frequency amplifier, said method comprising the steps of:

(a) providing a bipolar radio frequency amplifier having a radio frequency signal input;

(b) electrically coupling a PIN diode attenuator to the radio frequency signal input;

(c) providing a radio frequency amplifier control voltage;

(d) providing a variable current source capable of allowing transmission of a current to the PIN diode in response to the radio frequency amplifier control voltage; and

(e) transmitting a first predetermined current from the variable current source to the PIN diode in response to a selected radio frequency amplifier control voltage such that no more than sufficient radio frequency signal attenuation is achieved at the signal input to substantially eliminate self-biasing of the bipolar radio frequency power amplifier during transmission of large radio frequency signals to the radio frequency signal input when the radio frequency amplifier is in its off mode.

22. The method of claim 21 further comprising the step of:

(f) transmitting a second predetermined current from the variable current source to the PIN diode in response to a selected radio frequency amplifier control voltage such that no more than sufficient radio frequency signal attenuation is achieved at the signal input to substantially eliminate self-biasing of the bipolar radio frequency power amplifier during transmission of large radio frequency signals to the radio frequency signal input when the radio frequency amplifier is in a transition state between its off mode and its on mode.

23. The method of claim 22 further comprising the step of:

(g) providing a switching device capable of turning the PIN diode attenuator on and off.

24. The method of claim 23 further comprising the step of:

(h) activating the switching device when the bipolar radio frequency amplifier is powered down such that the PIN diode is turned off, thereby disallowing current to flow through the PIN diode.