×

Distributed inductively-coupled plasma source

  • US 6,273,022 B1
  • Filed: 03/14/1998
  • Issued: 08/14/2001
  • Est. Priority Date: 03/14/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A plasma chamber for fabricating semiconductors, comprising:

  • an enclosure for sealing an interior volume so as to withstand a vacuum in said interior;

    an RF power supply;

    a plurality of induction coils connected to receive electrical power from the RP power supply so that the coils produce a magnetic field in a portion of said interior, wherein each coil has an axial end positioned adjacent a first geometric surface having a circular transverse section, the coils are equally spaced azimuthally relative to said circular transverse section of the first geometric surface, and each coil has a transverse section which is wedge-shaped so that the adjacent sides of any two adjacent coils are approximately parallel to a radius of the circular transverse section of the geometric surface.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×