Integrated process for copper via filling
First Claim
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1. A sputtering process for sputtering copper onto a silicon wafer, comprising the steps of:
- placing said wafer into a plasma sputter reactor having a copper target;
a first step of sputter depositing copper with a first level of DC power applied to said target and with said sputter reactor being maintained at a first pressure; and
a second step of sputter depositing copper with a second level of DC power less than said first level of DC power applied to said target and said chamber being maintained at a second pressure higher than said first pressure.
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Abstract
A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
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Citations
19 Claims
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1. A sputtering process for sputtering copper onto a silicon wafer, comprising the steps of:
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placing said wafer into a plasma sputter reactor having a copper target;
a first step of sputter depositing copper with a first level of DC power applied to said target and with said sputter reactor being maintained at a first pressure; and
a second step of sputter depositing copper with a second level of DC power less than said first level of DC power applied to said target and said chamber being maintained at a second pressure higher than said first pressure. - View Dependent Claims (2)
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3. An integrated copper fill process, comprising the steps of:
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providing a substrate having a copper feature at a surface in a first dielectric layer, a second dielectric layer formed over said first dielectric layer, a hole formed through said second dielectric layer, and a barrier layer coated onto a bottom and sidewalls of said hole;
a first step of sputtering copper into said hole with a first fraction of copper ionization;
then a second step of sputtering copper into said hole with a second fractions of copper ionization less than said first fraction; and
then electrochemically depositing copper into said hole. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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10. An integrated copper fill process, comprising the steps of:
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providing a substrate having a copper feature at a surface in a first dielectric layer, a second dielectric layer formed over said first dielectric layer, a hole formed through said second dielectric layer, and a barrier layer is coated onto a bottom and sidewalls of said hole;
removing said barrier layer from said bottom of said hole, wherein said removing is performed in a chamber adapted for plasma sputtering of a metal target;
depositing a copper layer onto said sidewalls over said barrier layer and onto said bottom of said hole; and
then electrochemically depositing copper into said hole. - View Dependent Claims (11, 12, 13, 14)
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15. An integrated copper fill process, comprising the steps of:
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providing a substrate having a copper feature at a surface in a first dielectric layer, a second dielectric layer formed over said first dielectric layer, a hole formed through said second dielectric layer, and a barrier layer coated on a bottom and sidewalls of said hole;
a first step of removing at least a portion of said barrier layer coated on said bottom of said hole which is performed in a sputtering reactor having a copper target; and
a second step performed in said sputtering reactor of depositing a copper seed layer on said bottom and said sidewalls of said hole. - View Dependent Claims (16, 17, 18, 19)
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Specification