Method for forming a thin film of a metal compound by vacuum deposition

• US 6,274,014 B1
• Filed: 03/02/2000
• Issued: 08/14/2001
• Est. Priority Date: 03/05/1998
• Status: Expired due to Term

• Current Assignee: Shincron Co., Ltd.
• Original Assignee: Shincron Co., Ltd.
• Inventors: Matsumoto, Shigeharu, Kikuchi, Kazuo
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/517,340
• Time in Patent Office: 530 Days
• Field of Search: 204/298.06, 204/298.07, 204/298.08, 204/298.11, 204/298.14, 204/298.17, 204/298.25, 204/298.26, 118/719, 118/729
• US Class Current: 204/298.11
• CPC Class Codes: C23C 14/0047 Activation or excitation of reactive gases outside the coating chamber
• CPC Class Codes: C23C 14/0078 by moving the substrates between spatially separate sputtering and reaction stations

Abstract

A method for forming a thin film of a metal compound is disclosed. Within a vacuum chamber, a metallic ultra-thin film of a metal or an incompletely-reacted metal is deposited on a substrate. The metallic ultra-thin film is brought in contact with the electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas. The above-described steps are sequentially repeated so as to deposit on the substrate the ultra-thin film of the metal compound in layers until a thin film of the metal compound having a desired thickness is formed on the substrate.

Claims

1. A film deposition apparatus comprising:

a magnetron sputtering device;

a film deposition process zone for depositing on a substrate a metallic ultra-thin film of a metal or an incompletely-reacted metal through magnetron sputtering;

a reaction process zone for bringing the metallic ultra-thin film in contact with an electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas;

an activated-species generator for generating the activated species, said activated-species generator comprising a reactive gas plasma generation unit for generating a reactive gas plasma composed of reactive gas ions, electrons, and the electrically neutral activated species through the application of radio-frequency power to a reactive gas introduced thereinto;

a grid for selectively trapping charged particles, electrons, and ions, from the reactive gas plasma and for selectively allowing the electrically neutral activated species to pass therethrough, to thereby feed the electrically neutral activated species into said reaction process zone;

transfer means for transferring the substrate between said film deposition process zone and said reaction process zone; and

shield means for separating said film deposition process zone from said reaction process zone in terms of space and pressure so as to prevent the reactive gas from entering said film deposition process zone;

wherein the substrate is repeatedly transferred a plurality of times between said film deposition process zone and said reaction process zone so as to deposit on the substrate the ultra-thin film of the metal compound in a plurality of layers until a thin film of the metal compound having a desired thickness is formed on the substrate.

2. A film deposition apparatus according to claim 1, wherein said film deposition process zone contains a pair of targets of the same kind or different kinds insulated electrically from ground and means for applying an AC voltage to said pair of targets such that each of the targets has a polarity which alternates between positive and negative with respect to ground potential, so that in an alternating manner, one target serves as a cathode and the other target serves as an anode, to thereby deposit on the substrate the metallic ultra-thin film of a metal or an incompletely-reacted metal.

3. A film deposition apparatus according to claim 1, wherein the grid is a multi-aperture grid or multi-slit grid.

4. A film deposition apparatus according to claim 1, wherein the reactive gas plasma generation unit of the activated-species generator is an inductively-coupled plasma source which comprises a cylindrical dielectric and a coiled electrode arranged on an exterior circumferential surface of the dielectric and generates plasma through the application of a radio-frequency power of 100 kHz to 50 Khz to the coiled electrode.

5. A film deposition apparatus according to claim 1, wherein the reactive gas plasma generation unit of the activated-species generator is an inductively-coupled plasma source which comprises a disk-shaped dielectric and a spirally-coiled electrode arranged on an exterior surface of the dielectric and generates plasma through the application of a radio-frequency power of 100 kHz to 50 MHz to the spirally-coiled electrode.

6. A film deposition apparatus according to claim 1, wherein the reactive gas plasma generation unit of the activated-species generator is a capacitively-coupled plasma source which comprises an internal flat-plate electrode and generates plasma through the application of a radiofrequency power of 100 kHz to 0 MHz to the flat-plate electrode.

7. A film deposition apparatus according to claim 1, wherein the reactive gas plasma generation unit of the activated-species generator is a plasma source which comprises an internal coiled electrode or an internal spirally-coiled electrode and generates a mixture of inductively-coupled plasma and capacitively-coupled plasma through the application of a radio-frequency power of 100 kHz to 50 MHz to the electrode.

8. A film deposition apparatus according to claim 1, wherein helicon-wave plasma is generated in the reactive gas plasma generation unit in order to improve efficiency of generation of the activated-species by the activated-species generator.

9. A film deposition apparatus according to claim 1, wherein a magnetic field of 20-300 gauss is generated in the reactive gas plasma generation unit in order to improve the activated-species generation efficiency of the activated-species generator.

10. A film deposition apparatus according to claim 1, further comprising a substrate-loading chamber and a substrate-unloading chamber which are disposed on both sides of a film deposition chamber comprising said film deposition process zone and said reaction process zone, said substrate-loading chamber being adapted to carry out the attachment or detachment of a substrate holder and evacuation, and, as needed, to perform pretreatment, said substrate-unloading chamber being adapted to carry out the attachment or detachment of a substrate holder and evacuation, and, as needed, to perform posttreatment, said substrate-loading and substrate-unloading chambers having respective evacuation systems which are isolated from each other in terms of pressure, wherein a substrate is transferred between said substrate-loading chamber and said film deposition chamber and between said film deposition chamber and said substrate-unloading chamber so as to sequentially perform a thin film deposition process.