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Trench gated power device fabrication by doping side walls of partially filled trench

  • US 6,274,437 B1
  • Filed: 01/27/1998
  • Issued: 08/14/2001
  • Est. Priority Date: 06/14/1995
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a trench gated power device, the method comprising:

  • (i) forming a trench in a semiconductor substrate using a mask to define the trench region;

    (ii) either a) filling the trench with electrode material and removing part of the contents of the trench to leave a partially filled trench;

    or b) partially filling the trench with electrode material;

    (iii) doping the side walls of the partially filled trench with the mask still in place; and

    (iv) filling the remainder of the trench after step (iii);

    wherein the trench gated power device is one selected from the group consisting of a MOSFET, MESFET and IGBT.

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