×

Method for non mass selected ion implant profile control

  • US 6,274,459 B1
  • Filed: 02/16/1999
  • Issued: 08/14/2001
  • Est. Priority Date: 02/17/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for implanting a substrate face using a plasma processing apparatus, said method comprising:

  • providing a substrate on a face of a susceptor, said face of said susceptor comprising a portion that extends outside of a diameter of said substrate, said substrate having an exposed face, said exposed face comprising a substrate diameter that extends from a first edge of said substrate to a second edge of said substrate across a length of said substrate;

    forming a plasma sheath comprising hydrogen ions around said face of said substrate, said plasma sheath comprising a dark space distance that extends in a normal manner from said exposed face to an edge of said plasma sheath; and

    applying a voltage potential between said plasma sheath and said substrate to accelerate said hydrogen ions through said exposed face to a selected depth;

    wherein said dark space distance and said substrate diameter comprise a ratio between said dark space distance and said substrate diameter, said ratio being at about one half and less within substantially a first portion of said exposed face;

    wherein said substrate is maintained in an environment at a pressure of about 1 millitorr and less to reduce a possibility of a collision between at least one of said hydrogen ions and a neutral; and

    wherein said substrate is maintained at a temperature of about 205°

    Celsius and less to prevent a possibility of said implanted hydrogen ions from diffusing out of said substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×