Method for producing a group III nitride compound semiconductor substrate
First Claim
1. A method for producing a group III nitride compound semiconductor substrate, comprising:
- (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step;
(b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and
(c) cooling the substrate and separating the second semiconductor film from the first semiconductor film.
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Abstract
The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
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Citations
12 Claims
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1. A method for producing a group III nitride compound semiconductor substrate, comprising:
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(a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step;
(b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and
(c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
(a-1) forming a film made of the first group III nitride compound semiconductor on the substrate; and
(a-2) removing a part of the film, thereby forming a first semiconductor film provided with a plurality of grooves.
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3. The method for producing a group III nitride compound semiconductor substrate according to claim 2, wherein in the process (a-2), the plurality of grooves are formed in a stripe geometry.
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4. The method for producing a group III nitride compound semiconductor substrate according to claim 3, wherein the substrate is a (0001) plane sapphire substrate, and the grooves are formed in a [11 {overscore (2)} 0] direction.
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5. The method for producing a group III nitride compound semiconductor substrate according to claim 1, wherein the process (a) comprises:
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(a-1) forming a film made of the first group III nitride compound semiconductor and an insulating film in this order on the substrate; and
(a-2) removing a part of the film, thereby forming a first semiconductor film provided with a plurality of grooves.
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6. The method for producing a group III nitride compound semiconductor substrate according to claim 5, wherein in the process (a-2), the plurality of grooves are formed in a stripe geometry.
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7. The method for producing a group III nitride compound semiconductor substrate according to claim 6, wherein the substrate is a (0001) plane sapphire substrate, and the grooves are formed in a [11 {overscore (2)} 0] direction.
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8. The method for producing a group III nitride compound semiconductor substrate according to claim 5, wherein the insulating film is made of at least one selected from the group consisting of SiO2 and Si3N4.
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9. The method for producing a group III nitride compound semiconductor substrate according to claim 5, further comprising removing the insulating film selectively after the process (b) and before the process (c).
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10. The method for producing a group III nitride compound semiconductor substrate according to claim 1, wherein a lattice constant of the first group III nitride compound semiconductor is smaller than that of the second group III nitride compound semiconductor.
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11. The method for producing a group III nitride compound semiconductor substrate according to claim 1, wherein the first group III nitride compound semiconductor is AlXGa1−
- XN (where 0<
X≦
1), and the second group III nitride compound semiconductor is GaN.
- XN (where 0<
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12. The method for producing a group III nitride compound semiconductor substrate according to claim 1, wherein the process (c) further includes heating and cooling the substrate after cooling the substrate.
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