Method for forming ohmic electrode, and semiconductor device

• US 6,274,889 B1
• Filed: 09/21/1999
• Issued: 08/14/2001
• Est. Priority Date: 04/04/1997
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kitabatake, Makoto, Masato, Hiroyuki, Kumabuchi, Yasuhito, Ota, Yorito
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Lee, Eugene
• Application Number:
  US09/400,192
• Time in Patent Office: 693 Days
• Field of Search: 257/200, 257/12, 257/77, 257/624, 257/275
• US Class Current: 257/77
• CPC Class Codes: H01L 21/0485 Ohmic electrodes
• CPC Class Codes: H01L 21/0495 Schottky electrodes
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 29/6606 the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: Y10S 438/931 Silicon carbide semiconductor

Abstract

A semiconductor device having a single substrate made of silicon carbide; an epitaxial film made of Al_xIn_yGa_(1−x−y)N which is selectively formed on the single substrate; an amplifier section including a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the epitaxial film.

Claims

1. A semiconductor device comprising:

a single substrate made of silicon carbide;

an epitaxial film made of Al_xIn_yGa<sub>(1−

x−

y)</sub>N (where 0≦

x≦

1 and 0≦

y≦

1) and selectively formed on the single substrate;

an amplifier section comprising a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and

another amplifier section formed on the epitaxial film.

2. The semiconductor device of claim 1, wherein the epitaxial film comprises:

a barrier layer made of AlGaN; and

a well layer made of InGaN.

3. A semiconductor device comprising:

a single substrate made of silicon carbide;

a first epitaxial film formed on the single substrate and made of Al_xIn_yGa<sub>(1−

x−

y)</sub>N (where 0≦

x≦

1 and 0≦

y≦

1) lattice-matching with silicon carbide;

a second epitaxial film selectively formed on the first epitaxial film and made of Al_xIn_yGa<sub>(1−

x−

y)</sub>N (where 0≦

x≦

1 and 0≦

y≦

1);

an amplifier section comprising a gate formed on the first epitaxial film and a source layer and a drain layer which are formed within the single substrate; and

another amplifier section formed on the second epitaxial film.