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Method for forming ohmic electrode, and semiconductor device

  • US 6,274,889 B1
  • Filed: 09/21/1999
  • Issued: 08/14/2001
  • Est. Priority Date: 04/04/1997
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a single substrate made of silicon carbide;

    an epitaxial film made of AlxInyGa(1−

    x−

    y)
    N (where 0≦

    x≦

    1 and 0≦

    y≦

    1) and selectively formed on the single substrate;

    an amplifier section comprising a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and

    another amplifier section formed on the epitaxial film.

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