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Thin film transistor and fabricating method thereof an insulating layer having a pattern not being in contact with source or drain electrode

  • US 6,275,275 B1
  • Filed: 11/06/2000
  • Issued: 08/14/2001
  • Est. Priority Date: 10/02/1998
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor comprising:

  • a substrate;

    a source electrode and a drain electrode on the substrate;

    a first insulating layer on the substrate, the first insulating layer having a predetermined pattern such that the first insulating layer is not in contact with either the source electrode or the drain electrode;

    an active layer on the first insulating layer, the active layer having a source region, a channel region and a drain region;

    a second insulating layer covering the active layer;

    a gate electrode on the second insulating layer over the channel region;

    a third insulating layer covering the gate electrode and an exposed surface of the substrate;

    contact holes exposing the source and drain electrodes and the source and drain regions;

    a first interconnection wire connecting the source electrode to the source region; and

    a second interconnection wire connecting the drain electrode to the drain region, wherein the contact holes are substantially the same height.

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