Dielectric film deposition employing a bistertiarybutylaminesilane precursor

• US 6,277,200 B2
• Filed: 11/30/2000
• Issued: 08/21/2001
• Est. Priority Date: 05/28/1999
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Yieh, Ellie
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US09/728,718
• Publication Number:
  US 20010000476A1
• Time in Patent Office: 264 Days
• Field of Search: 118/697, 118/715
• US Class Current: 118/697
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

Claims

1. A substrate processing system comprising:

a housing for forming a process chamber;

a substrate moving system for moving said substrate into said process chamber and positioning said substrate on said substrate holder;

a gas delivery system for introducing a process gas into said process chamber to deposit a layer over said substrate;

a temperature control system for maintaining a selected temperature of the substrate;

a pressure control system for maintaining a selected pressure within said process chamber;

a controller for controlling said gas delivery system, said temperature control system and said pressure control system; and

a memory data communication with said controller containing a computer program, to be operated on by said controller, for practicing a process comprising the steps of;

flowing, into said process chamber, a process gas including bistertiarybutylaminesilane (BTBAS); and

maintaining said deposition zone at process conditions suitable for depositing a silicon-containing dielectric layer on said substrate without chemical reaction between the BTBAS and another nitrogen source.

2. The substrate processing system of claim 1 wherein the process gas further includes an oxygen source.

3. The substrate processing system of claim 2 wherein the oxygen source includes molecular oxygen, O₂, or ozone, O₃.

4. The substrate processing system of claim 1 wherein the silicon-containing dielectric layer is deposited on the substrate by self-decomposition of the BTBAS involving breaking nitrogen-carbon bonds in the BTBAS.

5. The substrate processing system of claim 4 wherein the silicon-containing dielectric layer is deposited on the substrate by self-decomposition of the BTBAS involving decoupling silicon-nitrogen bonds in the BTBAS.

6. The substrate processing system of claim 1 wherein the computer program includes computer instructions for controlling the pressure control system to maintain a pressure level within the process chamber of no greater than 760 Torr.

7. The substrate processing system of claim 6 wherein the pressure level is no less than 1 Torr.

8. The substrate processing system of claim 6 wherein the pressure level is no greater than 625 Torr.

9. The substrate processing system of claim 1 wherein the dielectric layer is a silicon nitride layer or a silicon oxynitride layer.

10. The substrate processing system of claim 1 wherein the computer program includes computer instructions for controlling the temperature control system to maintain a temperature level of the substrate in the range of 500°

to 650°

C.

11. The substrate processing system of claim 1 wherein the process gas enters the process chamber at a point separated from said substrate by approximately 240 mils.

12. The substrate processing system of claim 1 wherein the computer program includes computer instructions for controlling the gas delivery system to provide two flows of gases, including a flow of an oxygen source and a flow of the BTBAS, with the flow of BTBAS entering the process chamber at a rate in the range of 400-1200 milligrams per minute (mgm).

13. The substrate processing system of claim 12 wherein the flow of the oxygen source enters the process chamber at a rate in the range of 1,000 to 3,000 sccm.

14. A substrate processing system comprising:

a housing for forming a process chamber;

a substrate moving system for moving said substrate into said process chamber and positioning said substrate on said substrate holder;

a gas delivery system for introducing a process gas into said process chamber to deposit a layer over said substrate;

a temperature control system for maintaining a selected temperature of the substrate;

a pressure control system for maintaining a selected pressure within said process chamber;

a controller for controlling said gas delivery system, said temperature control system and said pressure control system; and

a memory data communication with said controller containing a computer program, to be operated on by said controller, for practicing a process comprising the steps of;

flowing, into said process chamber, a process gas including bistertiarybutylaminesilane (BTBAS); and

maintaining said deposition zone at process conditions suitable for depositing a silicon nitride layer on said substrate by self-decomposition of the BTBAS.

15. The substrate processing system of claim 14 wherein the process gas includes a carrier gas comprising molecular nitrogen, N₂, or helium.

16. The substrate processing system of claim 14 wherein the silicon nitride layer is deposited on the substrate by self-decomposition of the BTBAS involving breaking nitrogen-carbon bonds in the BTBAS.

17. A substrate processing system comprising:

a housing for forming a process chamber;

a substrate moving system for moving said substrate into said process chamber and positioning said substrate on said substrate holder;

a gas delivery system for introducing a process gas into said process chamber to deposit a layer over said substrate;

a temperature control system for maintaining a selected temperature of the substrate;

a pressure control system for maintaining a selected pressure within said process chamber;

a controller for controlling said gas delivery system, said temperature control system and said pressure control system; and

a memory data communication with said controller containing a computer program, to be operated on by said controller, for practicing a process comprising the steps of;

flowing, into said process chamber, a process gas including bistertiarybutylaminesilane (BTBAS), the process gas containing no additional nitrogen source therein; and

maintaining said deposition zone at process conditions suitable for depositing a silicon-containing dielectric layer on said substrate by self-decomposition of the BTBAS.

18. The substrate processing system of claim 17 wherein the dielectric layer is a silicon nitride or silicon oxynitride layer.

19. The substrate processing system of claim 17 wherein the silicon-containing dielectric layer is deposited on the substrate by self-decomposition of the BTBAS involving breaking nitrogen-carbon bonds in the BTBAS.