Precisely defined microelectromechanical structures and associated fabrication methods
First Claim
1. A method for fabricating a microelectromechanical (MEMS) structure comprising:
- providing a silicon-on-insulator (SOI) wafer comprising a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer;
etching at least one trench through the silicon layer by reactive ion etching;
bonding a support substrate to the silicon layer following said etching step, wherein a surface of the support substrate that is bonded to the silicon layer is nonplanar such that at least one cavity is defined between the support substrate and the SOI wafer;
removing the handle wafer following said bonding step; and
thereafter selectively removing the insulating layer such that the resulting MEMS structure comprises a silicon component at least partially suspended over the cavity and at least partially defined by the at least one trench etched through the silicon layer.
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Accused Products
Abstract
A method is provided for fabricating a MEMS structure from a silicon-on insulator (SOI) wafer that has been bonded to a support substrate, such as a glass substrate, in order to form silicon components that can be both precisely and repeatedly formed. The SOI wafer includes a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer. At least one trench is etched through the silicon layer by reactive ion etching. By utilizing the reactive ion etching, the trenches can be precisely defined, such as to within a tolerance of 0.1 to 0.2 microns of a predetermined width. After bonding the support substrate to the silicon layer, the handle wafer is removed, such as by reactive ion etching. Thereafter, the insulating layer is selectively removed, again typically by reactive ion etching, to form the resulting MEMS structure that has a very precise and repeatable size and shape, such as to within a fraction of a micron. As such, a MEMS structure is also provided according to the present invention in which a plurality of silicon components that vary in size by no more than 0.2 microns are bonded to a support substrate, such as to form an array having a plurality of MEMS elements that have the same or substantially similar performance characteristics.
77 Citations
12 Claims
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1. A method for fabricating a microelectromechanical (MEMS) structure comprising:
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providing a silicon-on-insulator (SOI) wafer comprising a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer;
etching at least one trench through the silicon layer by reactive ion etching;
bonding a support substrate to the silicon layer following said etching step, wherein a surface of the support substrate that is bonded to the silicon layer is nonplanar such that at least one cavity is defined between the support substrate and the SOI wafer;
removing the handle wafer following said bonding step; and
thereafter selectively removing the insulating layer such that the resulting MEMS structure comprises a silicon component at least partially suspended over the cavity and at least partially defined by the at least one trench etched through the silicon layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating a microelectromechanical (MEMS) structure comprising:
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providing a silicon-on-insulator (SOI) wafer comprising a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer;
etching at least one trench through the silicon layer by reactive ion etching;
bonding a support substrate to the silicon layer following said etching step, wherein a surface of the support substrate that is bonded to the silicon layer supports at least one conductive element;
removing the handle wafer following said bonding step; and
thereafter selectively removing the insulating layer such that the resulting MEMS structure comprises a silicon component that at least partially overlies the at least one conductive element supported by the support substrate and that is at least partially defined by the at least one trench etched through the silicon layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification