Transistor utilizing photonic band-gap material and integrated circuit devices comprising same
First Claim
1. An article including a photonic band-gap device adapted for substantially preventing electromagnetic radiation having one or more select wavelengths from propagating within the device, the photonic-band gap device comprising a substrate having a light propogation path therein, and a photoresponsive region disposed within a portion of the light propogation path in the substrate so that the wavelength of radiation propogated alone the light propogation path may be controllably modified by applying light to the photoresponsive region to define a tunable photonic band-gap device.
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Abstract
A tunable photonic band-gap device is disclosed which utilizes photoresponsive materials and is tunable over a range of wavelengths with the application of light. The device comprises a structure having a plurality of photoresponsive regions arranged in a matrix whereby the behavior of the device in preventing electromagnetic radiation from propagating through the structure may be modified by applying light to the photoresponsive regions. In one embodiment, a photonic band-gap transistor has a light propagation path defined by a plurality of dielectric and photoresponsive rods disposed in a substrate for the routing of a signal through the structure from an inlet to an outlet. The path comprises an input signal path beginning at the inlet, an output signal path terminating at the outlet, and a control signal path which merges with the input signal path to be joined with the output signal path at a common intersection point. In this embodiment, photoresponsive rods are disposed at the common intersection point so that a control signal may be selectively passed to the photoresponsive rods to alter the optical properties of the photoresponsive rods and thereby tune the output signal generated by the device at the outlet.
37 Citations
19 Claims
- 1. An article including a photonic band-gap device adapted for substantially preventing electromagnetic radiation having one or more select wavelengths from propagating within the device, the photonic-band gap device comprising a substrate having a light propogation path therein, and a photoresponsive region disposed within a portion of the light propogation path in the substrate so that the wavelength of radiation propogated alone the light propogation path may be controllably modified by applying light to the photoresponsive region to define a tunable photonic band-gap device.
- 7. An article including a photonic band-gap device for substantially preventing electromagnetic radiation having one or more wavelengths from propagating within the device, the photonic-band gap device comprising a substrate and a photoresponsive region disposed in the substrate so that the behavior of the photonic band-gap device in substantially preventing the propagation of radiation may be modified by applying light to the photoresponsive region, in which the photoresponsive region comprises a plurality of rods of photoresponsive materials disposed in the substrate.
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14. A communications system comprising a transmitter, an N-channel multiplexer/demultiplexer, and a receiver connected by a trunk optical fiber, in which at least one of the transmitter and the receiver comprises a photonic band-gap device for substantially preventing electromagnetic radiation having one or more wavelengths from propagating within the device, the photonic-band gap device comprising a substrate and a photoresponsive region disposed in the substrate so that the behavior of the photonic band-gap device in substantially preventing the propagation of radiation may be modified by applying light to the photoresponsive region.
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15. A photonic band-gap transistor comprising:
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a substrate;
a plurality of dielectric rods and a plurality of photoresponsive rods arranged in a matrix in the substrate, and a light propagation path defined in the substrate by the arrangement of the plurality of dielectric rods for the routing of a light signal through the structure from an inlet to an outlet, the light propagation path comprising an input signal path beginning at the inlet, an output signal path ending at the outlet, and a control signal path, in which the input signal path and the control signal path merge at a common intersection point to be joined with the output signal path, and the photoresponsive rods are disposed within the light propagation path at the common intersection point, whereby as the signal is routed through the photonic band-gap transistor along the light propagation path from the inlet to the outlet, a control signal may be selectively passed through the control signal path to the photoresponsive rods to alter the optical properties of the photoresponsive rods and thereby change the signal generated by the photonic band-gap transistor at the outlet. - View Dependent Claims (16, 17, 18)
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19. A method for modifying the photonic bandgap behavior of a photonic band-gap device comprising the steps of:
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(a) providing a photonic band-gap device for substantially preventing electromagnetic radiation having one or more wavelengths from propagating within the device, the photonic-band gap device comprising a substrate and a photoresponsive region disposed in the substrate so that the behavior of the photonic band-gap device in substantially preventing the propagation of radiation may be modified by applying light to the photoresponsive region;
and (b) applying light to the device to alter the optical properties of the photoresponsive region.
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Specification