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Semiconductor device and method of manufacturing the same

  • US 6,278,132 B1
  • Filed: 03/18/1999
  • Issued: 08/21/2001
  • Est. Priority Date: 07/11/1996
  • Status: Expired due to Term
First Claim
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1. A liquid crystal display device comprising:

  • a substrate;

    an underlying film formed on said substrate;

    a shift register circuit comprising a plurality of clocked inverter circuits and a plurality of inverter circuits provided over said substrate, each of said clocked inverter circuits and said inverter circuits comprising at least one n-channel thin film transistor exhibiting normally OFF characteristics and at least one p-channel thin film transistor exhibiting normally OFF characteristics;

    said n-channel thin film transistor comprising a first crystalline semiconductor film comprising silicon having a thickness of 100 to 1,000 Å

    ;

    said p-channel thin film transistor comprising a second crystalline semiconductor film comprising silicon having a thickness of 100 to 1,000 Å

    , wherein at least an edge portion of said first crystalline semiconductor film comprises boron introduced at a concentration of 1×

    1016 to 1×

    1019/cm3, and at least a channel region of said second crystalline semiconductor film comprises boron introduced at a concentration of 1×

    1016 to 1×

    1019/cm3, and wherein said shift register has an S value of 85 mV/dec or lower.

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