Method and circuitry for performing analog over-program and under-program detection for a multistate memory cell

• US 6,278,632 B1
• Filed: 12/12/1997
• Issued: 08/21/2001
• Est. Priority Date: 10/24/1996
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Chevallier, Christophe J.
• Primary Examiner(s): LE, VU ANH
• Application Number:
  US08/991,216
• Time in Patent Office: 1,348 Days
• Field of Search: 365/185.03, 365/185.2, 365/185.21, 365/185.22
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5635 Erasing circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/3454 Arrangements for verifying correct programming or for detecting overprogrammed cells
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 16/3463 Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification
• CPC Class Codes: G11C 2211/5621 Multilevel programming verification
• CPC Class Codes: G11C 2211/5642 Multilevel memory with buffers, latches, registers at input or output
• CPC Class Codes: G11C 2211/5644 Multilevel memory comprising counting devices
• CPC Class Codes: G11C 29/00 Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Abstract

A method for detecting an under-programming or over-programming condition in a multistate memory cell. The method uses three sense amplifiers, each with an associated reference cell which produces a reference voltage for input to each of the sense amplifiers. Control circuitry is used which allows the reference cell currents to be varied to produce the reference voltages or pairs of reference voltages needed to accurately determine the threshold voltage and hence state of a programmed or erased memory cell. This information is used by a controller to determine if a memory cell has been over-programmed, under-programmed, or properly programmed. If the cell has not been properly programred, then additional programming pulses are applied (in the case of under-programming) or an error flag is set and the programming algorithm is terminated (in the case of an over-programmed cell).

Claims

1. A memory device comprising:

an array of memory cells each adapted to store multiple bits of data;

a plurality of sense amplifiers coupled to the array to sense the data stored on the memory cells;

reference circuitry coupled to the plurality of sense amplifiers to provide reference voltages; and

control circuitry coupled to the reference circuitry to control the reference circuitry to provide first reference voltages for a read operation, second reference voltages for an over program operation, and third reference voltages for an under program operation.

2. The memory device of claim 1 wherein the reference circuitry comprises a plurality of reference memory cells.

3. The memory device of claim 1 wherein each memory cell stores 2ⁿ bits of data, and the plurality of sense amplifiers comprise 2ⁿ−

1 sense amplifiers.

4. The memory device of claim 3 wherein the reference circuitry comprises 2ⁿ−

1 reference cells.

5. The memory device of claim 1 wherein the array of memory cells comprises non-volatile memory cells.

6. A memory device comprising:

an array of memory cells each adapted to store two bits of data;

three sense amplifiers coupled to the array to sense the data stored on the memory cells;

reference circuitry coupled to the three sense amplifiers to provide three reference voltages; and

control circuitry coupled to the reference circuitry to control the reference circuitry to provide first reference voltages for a read operation, second reference voltages for an over program operation, and third reference voltages for an under program operation.

7. The memory device of claim 6 wherein the reference circuitry provides three reference voltages having a value of approximately 3.7, 4.7 and 5.7 volts for use during the read operation.

8. The memory device of claim 6 wherein the reference circuitry provides three reference voltages having a value of approximately 3.5, 4.5 and 5.5 volts for use during the over program operation.

9. The memory device of claim 6 wherein the reference circuitry provides three reference voltages having a value of approximately 4.0, 5.0 and 6.0 volts for use during the under program operation.

10. A method of storing data in a memory cell adapted to store multiple bits of data, the method comprising:

programming the memory cell to a desired state;

reading the memory cell to generate a first data signal;

generating a first set of reference voltages;

comparing the first data signal with the first set of reference voltages to determine if the memory cell is under programmed, and programming the memory cell again to the desired state if the memory cell is under programmed;

generating a second set of reference voltages;

reading the memory cell to generate a second data signal; and

comparing the second data signal with the second set of reference voltages to determine if the memory cell is over programmed.

11. The method of claim 10 further comprising generating an error signal in response to a determination that the memory cell is over programmed.

12. A non-volatile memory device comprising:

an array of memory cells each adapted to store multiple bits of data;

a plurality of sense amplifiers coupled to the array for sensing the data stored on the memory cells; and

means for providing reference voltages to the plurality of sense amplifiers, such that first reference voltages are provided for a read operation, second reference voltages are provided for an over program operation, and third reference voltages are provided for an under program operation.

13. A memory device comprising:

an array of multi-state memory cells, each cell being connected to a data line to provide a read signal on the data line;

three sense amplifiers coupled to each data line to sense the read signal on the data line; and

means for providing first reference voltages for a read operation, second reference voltages for an over program operation, and third reference voltages for an under program operation to the three sense amplifiers.

14. A method comprising:

programming a multi-state flash memory cell to a desired one of a lowest threshold voltage defined below a lowest maximum threshold voltage, a highest threshold voltage defined above a highest minimum threshold voltage, and a plurality of intermediate threshold voltages, each intermediate threshold voltage being defined between a maximum threshold voltage and a minimum threshold voltage;

performing an under-programming verification operation comprising;

generating a plurality of first reference signals corresponding to, respectively, current in a multi-state flash memory cell having the highest minimum threshold voltage, and current in multi-state flash memory cells having, respectively, the minimum threshold voltages;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with each of the first reference signals to determine the threshold voltage of the memory cell; and

identifying the memory cell as under-programmed if the threshold voltage of the memory cell is lower than the desired threshold voltage; and

performing an over-programming verification operation comprising;

generating a plurality of second reference signals corresponding to, respectively, current in a multi-state flash memory cell having the lowest maximum threshold voltage, and current in multi-state flash memory cells having, respectively, the maximum threshold voltages;

reading the memory cell to generate a read signal corresponding to the threshold voltage of the memory cell;

comparing the read signal with each of the second reference signals to determine the threshold voltage of the memory cell; and

identifying the memory cell as over-programmed if the threshold voltage of the memory cell is higher than the desired threshold voltage.

15. The method of claim 14 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

16. A method comprising:

programming a multi-state flash memory cell to a desired one of a lowest threshold voltage defined below a lowest maximum threshold voltage, a highest threshold voltage defined above a highest minimum threshold voltage, and a plurality of intermediate threshold voltages, each intermediate threshold voltage being defined between a maximum threshold voltage and a minimum threshold voltage;

performing an under-programming verification operation comprising;

generating a plurality of reference signals corresponding to, respectively, current in a multi-state flash memory cell having the highest minimum threshold voltage, and current in multi-state flash memory cells having, respectively, the minimum threshold voltages;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with each of the reference signals to determine the threshold voltage of the memory cell; and

identifying the memory cell as under-programmed if the threshold voltage of the memory cell is lower than the desired threshold voltage.

17. The method of claim 16 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

18. A method comprising:

programming a multi-state flash memory cell to a desired one of a lowest threshold voltage defined below a lowest maximum threshold voltage, a highest threshold voltage defined above a highest minimum threshold voltage, and a plurality of intermediate threshold voltages, each intermediate threshold voltage being defined between a maximum threshold voltage and a minimum threshold voltage;

performing an over-programming verification operation comprising;

generating a plurality of reference signals corresponding to, respectively, current in a multi-state flash memory cell having the lowest maximum threshold voltage, and current in multi-state flash memory cells having, respectively, the maximum threshold voltages;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with each of the reference signals to determine the threshold voltage of the memory cell; and

identifying the memory cell as over-programmed if the threshold voltage of the memory cell is higher than the desired threshold voltage.

19. The method of claim 18 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

20. A method comprising:

programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage;

performing an under-programming verification operation comprising;

generating a first reference signal corresponding to current in a multi-state flash memory cell having the minimum threshold voltage;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with the first reference signal to determine the threshold voltage of the memory cell; and

identifying the memory cell as under-programmed if the threshold voltage of the memory cell is lower than the minimum threshold voltage; and

performing an over-programming verification operation comprising;

generating a second reference signal corresponding to current in a multi-state flash memory cell having the maximum threshold voltage;

reading the memory cell to generate a read signal corresponding to the threshold voltage of the memory cell;

comparing the read signal with the second reference signal to determine the threshold voltage of the memory cell; and

identifying the memory cell as over-programmed if the threshold voltage of the memory cell is higher than the maximum threshold voltage.

21. The method of claim 20 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

22. A method comprising:

programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage; and

performing an under-programming verification operation comprising;

generating a reference signal corresponding to current in a multi-state flash memory cell having the minimum threshold voltage;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with the reference signal to determine the threshold voltage of the memory cell; and

identifying the memory cell as under-programmed if the threshold voltage of the memory cell is lower than the minimum threshold voltage.

23. The method of claim 22 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

24. A method comprising:

programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage; and

performing an over-programming verification operation comprising;

generating a reference signal corresponding to current in a multi-state flash memory cell having the maximum threshold voltage;

reading the memory cell to generate a read signal corresponding to a threshold voltage of the memory cell;

comparing the read signal with the reference signal to determine the threshold voltage of the memory cell; and

identifying the memory cell as over-programmed if the threshold voltage of the memory cell is higher than the maximum threshold voltage.

25. The method of claim 24 wherein reading the memory cell comprises:

applying a voltage to the memory cell to render the memory cell conductive; and

generating a read signal corresponding to a current in the memory cell.

26. A method comprising:

programming a multi-state memory cell to a desired state defined between a maximum and a minimum;

performing an under-programming verification operation comprising;

generating a first reference signal corresponding to the minimum;

reading the memory cell to generate a read signal corresponding to a state of the memory cell;

comparing the read signal with the first reference signal to determine the state of the memory cell; and

identifying the memory cell as under-programmed if the state of the memory cell is lower than the minimum; and

performing an over-programming verification operation comprising;

generating a second reference signal corresponding to the maximum;

reading the memory cell to generate a read signal corresponding to the state of the memory cell;

comparing the read signal with the second reference signal to determine the state of the memory cell; and

identifying the memory cell as over-programmed if the state of the memory cell is higher than the maximum.

27. The method of claim 26 wherein:

programming a multi-state memory cell comprises programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage;

generating a first reference signal comprises generating a first reference signal corresponding to current in a multi-state flash memory cell having the minimum threshold voltage;

generating a second reference signal comprises generating a second reference signal corresponding to current in a multi-state flash memory cell having the maximum threshold voltage;

identifying the memory cell as under-programmed comprises identifying the multi-state flash memory cell as under-programmed if its threshold voltage is lower than the minimum threshold voltage;

identifying the memory cell as over-programmed comprises identifying the multi-state flash memory cell as over-programmed if its threshold voltage is higher than the maximum threshold voltage; and

reading the memory cell comprises;

applying a voltage to the multi-state flash memory cell to render the multi-state flash memory cell conductive; and

generating a read signal corresponding to a current in the multi-state flash memory cell.

28. A method comprising:

programming a multi-state memory cell to a desired state defined between a maximum and a minimum; and

performing an under-programming verification operation comprising;

generating a reference signal corresponding to the minimum;

reading the memory cell to generate a read signal corresponding to a state of the memory cell;

comparing the read signal with the reference signal to determine the state of the memory cell; and

identifying the memory cell as under-programmed if the state of the memory cell is lower than the minimum.

29. The method of claim 28 wherein:

programming a multi-state memory cell comprises programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage;

generating a reference signal comprises generating a reference signal corresponding to current in a multi-state flash memory cell having the minimum threshold voltage;

identifying the memory cell as under-programmed comprises identifying the multi-state flash memory cell as under-programmed if its threshold voltage is lower than the minimum threshold voltage; and

reading the memory cell comprises;

applying a voltage to the multi-state flash memory cell to render the multi-state flash memory cell conductive; and

generating a read signal corresponding to a current in the multi-state flash memory cell.

30. A method comprising:

programming a multi-state memory cell to a desired state defined between a maximum and a minimum; and

performing an over-programming verification operation comprising;

generating a reference signal corresponding to the maximum;

reading the memory cell to generate a read signal corresponding to a state of the memory cell;

comparing the read signal with the reference signal to determine the state of the memory cell; and

identifying the memory cell as over-programmed if the state of the memory cell is higher than the maximum.

31. The method of claim 30 wherein:

programming a multi-state memory cell comprises programming a multi-state flash memory cell to a desired threshold voltage defined between a maximum threshold voltage and a minimum threshold voltage;

generating a reference signal comprises generating a reference signal corresponding to current in a multi-state flash memory cell having the maximum threshold voltage;

identifying the memory cell as over-programmed comprises identifying the multi-state flash memory cell as over-programmed if its threshold voltage is higher than the maximum threshold voltage; and

reading the memory cell comprises;

applying a voltage to the multi-state flash memory cell to render the multi-state flash memory cell conductive; and

generating a read signal corresponding to a current in the multi-state flash memory cell.

32. A method comprising:

programming a multi-state flash memory cell to hold a threshold voltage representing a unique data value and being located between an upper threshold voltage and a lower threshold voltage;

performing an under-programming verification operation on the cell comprising;

setting a first reference signal to correspond to the lower threshold voltage;

reading the cell to generate a read signal corresponding to a data value stored in the cell;

comparing the read signal with the first reference signal to determine the data value stored in the cell; and

comparing the data value stored in the cell with the data value programmed to determine if the cell is under-programmed; and

performing an over-programming verification operation on the cell comprising;

setting a second reference signal to correspond to the upper threshold voltage;

reading the cell to generate a read signal corresponding to the data value stored in the cell;

comparing the read signal with the second reference signal to determine the data value stored in the cell; and

comparing the data value stored in the cell with the data value programmed to determine if the cell is over-programmed.

33. The method of claim 32 wherein:

setting a first reference signal comprises generating a first reference voltage corresponding to current in a multi-state flash memory cell having the lower threshold voltage;

setting a second reference signal comprises generating a second reference voltage corresponding to current in a multi-state flash memory cell having the upper threshold voltage; and

reading the cell comprises;

applying a voltage to the cell to render the cell conductive; and

generating a read signal corresponding to a current in the cell.

34. A method comprising:

programming a multi-state flash memory cell to hold a threshold voltage representing a unique data value and being located between an upper threshold voltage and a lower threshold voltage; and

performing an under-programming verification operation on the cell comprising;

setting a reference signal to correspond to the lower threshold voltage;

reading the cell to generate a read signal corresponding to a data value stored in the cell;

comparing the read signal with the reference signal to determine the data value stored in the cell; and

comparing the data value stored in the cell with the data value programmed to determine if the cell is under-programmed.

35. The method of claim 34 wherein:

setting a reference signal comprises generating a reference voltage corresponding to current in a multi-state flash memory cell having the lower threshold voltage; and

reading the cell comprises;

applying a voltage to the cell to render the cell conductive; and

generating a read signal corresponding to a current in the cell.

36. A method comprising:

programming a multi-state flash memory cell to hold a threshold voltage representing a unique data value and being located between an upper threshold voltage and a lower threshold voltage; and

performing an over-programming verification operation on the cell comprising;

setting a reference signal to correspond to the upper threshold voltage;

reading the cell to generate a read signal corresponding to a data value stored in the cell;

comparing the read signal with the reference signal to determine the data value stored in the cell; and

comparing the data value stored in the cell with the data value programmed to determine if the cell is over-programmed.

37. The method of claim 36 wherein:

setting a reference signal comprises generating a reference voltage corresponding to current in a multi-state flash memory cell having the upper threshold voltage; and

reading the cell comprises;

applying a voltage to the cell to render the cell conductive; and

generating a read signal corresponding to a current in the cell.