Sputtering apparatus for filling pores of a circular substrate
First Claim
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1. A magnetron sputtering apparatus for filling pores of a substrate wherein the apparatus comprises a vacuum chamber to be evacuated which has an internal gas pressure level held at not higher than 1×
- 10−
1 Pa, means for introducing discharge gas into the vacuum chamber, target and substrate electrodes arranged opposite one another in the vacuum chamber and respectively mounted with a target and the substrate, said target and the substrate being separated from each other with a distance more than 77 mm and greater than the diameter of the substrate, and a magnet provided on a side of the target electrode away from the substrate electrode.
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Abstract
A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1×10−1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.
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2 Claims
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1. A magnetron sputtering apparatus for filling pores of a substrate wherein the apparatus comprises a vacuum chamber to be evacuated which has an internal gas pressure level held at not higher than 1×
- 10−
1 Pa, means for introducing discharge gas into the vacuum chamber, target and substrate electrodes arranged opposite one another in the vacuum chamber and respectively mounted with a target and the substrate, said target and the substrate being separated from each other with a distance more than 77 mm and greater than the diameter of the substrate, and a magnet provided on a side of the target electrode away from the substrate electrode.
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2. A magnetron sputtering apparatus for filling pores of a substrate comprising a vacuum chamber to be evacuated which has an internal gas pressure level held at not higher than 1×
- 10−
1 Pa, means for introducing discharge gas into the vacuum chamber, target and substrate electrodes arranged opposite one another in the vacuum chamber and respectively mounted with a target and the substrate arranged to hold a relationship of b/a<
tan θ
, a, b and θ
respectively representing the diameter and the depth of each pore of the substrate and the angle of incidence of each target atom driven out of the target to hit the substrate, said target and the substrate being separated from each other with a distance more than 77 mm, and a magnet provided on a side of the target electrode away from the substrate electrode.
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Specification
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Current AssigneeUlvac Incorporated
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Original AssigneeUlvac Incorporated
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InventorsToyoda, Satoru, Obinata, Hisaharu, Kiyota, Tetsuji, Kadokura, Yoshiyuki
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Primary Examiner(s)MCDONALD, RODNEY GLENN
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Application NumberUS08/963,197Time in Patent Office1,394 DaysField of Search204/192.12, 204/192.3, 204/298.06, 204/298.08, 204/298.09, 204/298.19, 204/298.2, 204/298.34, 204/298.12, 204/298.07US Class Current204/298.19CPC Class CodesC23C 14/046 Coating cavities or hollow ...C23C 14/345 using substrate biasC23C 14/35 by application of a magneti...H01J 2237/3327 Coating high aspect ratio w...H01J 37/3402 using supplementary magneti...
