Manufacturing method for nitride III-V compound semiconductor device using bonding

• US 6,281,032 B1
• Filed: 04/14/1999
• Issued: 08/28/2001
• Est. Priority Date: 04/22/1998
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Nakayama, Norikazu, Matsuda, Osamu, Kobayashi, Toshimasa, Kawai, Hiroji
• Primary Examiner(s): CHRISTIANSON, KEITH ALAN
• Application Number:
  US09/291,016
• Time in Patent Office: 867 Days
• Field of Search: 438/107, 438/108, 438/455, 438/456, 438/458, 438/459
• US Class Current: 438/42
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/8252 the substrate being a semiconductor, using III-V technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discrete pellets. A GaN semiconductor laser chip, thus obtained, is assembled on a package.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

bonding a surface of a nitride III-V compound semiconductor layer of a first wafer-shaped or bar-shaped substrate to one of major surfaces of a second wafer-shaped or bar-shaped substrate, said first substrate having said nitride III-V compound semiconductor layer on one of major surfaces thereof to form a plurality of devices;

forming said plurality of devices on said nitride III-V compound semiconductor layer; and

dividing said first substrate and said second substrate bonded together into a plurality of portions.

2. The method for manufacturing a semiconductor device according to claim 1 wherein said first substrate and said second substrate bonded together are divided into individual devices.

3. The method for manufacturing a semiconductor device according to claim 1 wherein said plurality of devices are separated by grooves deep enough to reach said first substrate.

4. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of lapping said first substrate from the other major surface thereof at least deep enough to reach said grooves.

5. The method for manufacturing a semiconductor device according to claim 4 further comprising the step of dicing said first substrate from the other major surface thereof at least deep enough to reach said grooves.

6. The method for manufacturing a semiconductor device according to claim 1 wherein electrodes of said devices are formed on said nitride III-V compound semiconductor layer of said first substrate, and solder electrodes are formed on said one major surface of said second substrate in locations corresponding to said electrodes of said devices.

7. The method for manufacturing a semiconductor device according to claim 6 wherein said first substrate and said second substrate are bonded together by bonding said electrodes of said devices on said first substrate to said electrodes on said second substrate.

8. The method for manufacturing a semiconductor device according to claim 1 wherein said devices are semiconductor lasers, light emitting diodes or electron transport devices.

9. The method for manufacturing a semiconductor device according to claim 1 wherein said first substrate is a sapphire substrate, SiC substrate, Si substrate, spinel substrate or ZnO substrate.

10. The method for manufacturing a semiconductor device according to claim 1 wherein said second substrate is a Si substrate, SiC substrate, diamond substrate, AlN substrate, GaN substrate, ZnO substrate or spinel substrate.

11. The method for manufacturing a semiconductor device according to claim 1 wherein said devices are semiconductor lasers, and said second substrate is a Si substrate on which photo diodes for monitoring light outputs of said semiconductor lasers are formed for respective devices.

12. A method for manufacturing a semiconductor device comprising the steps of:

bonding a surface of a nitride III-V compound semiconductor layer of a first wafer-shaped or bar-shaped substrate to one of major surfaces of a second wafer-shaped or bar-shaped substrate, said first substrate having said nitride III-V compound semiconductor layer on one of major surfaces thereof to form a plurality of devices separated from each other by grooves deep enough to reach said first substrate, said nitride III-V compound semiconductor layer having on a surface thereof first projections and second projections extending in parallel with said grooves and separated from each other; and

dividing said first substrate and said second substrate bonded together into a plurality of portions.

13. A method for manufacturing a semiconductor device comprising the steps of:

bonding a surface of a nitride III-V compound semiconductor layer of a first wafer-shaped or bar-shaped substrate to one of major surfaces of a second wafer-shaped or bar-shaped substrate, said first substrate having said nitride III-V compound semiconductor layer on one of major surfaces thereof to form a device; and

dividing said first substrate and said second substrate bonded together into a plurality of portions.

14. A method for manufacturing a semiconductor device comprising the steps of:

preparing a GaN semiconductor laser wafer by;

forming a plurality of semiconductor lasers on an AlGaInN semiconductor layer formed on a top surface of a c-face sapphire substrate, said plurality of semiconductors being separated from each other by grooves formed deep enough into said AlGaInN semiconductor layer to reach said c-face sapphire substrate;

forming a p-side electrode and an n-side electrode in each of said semiconductor lasers;

bonding said GaN semiconductor laser wafer to a photo-diode built-in Si wafer having formed thereon at least a pellet corresponding to each semiconductor laser, each pellet having a photo-diode for monitoring light outputs and at least two solder electrode, by positioning said p-side electrode and said n-side electrode in alignment with said at least two solder electrodes, respectively;

separating from each other said semiconductor lasers on said photo-diode built-in Si wafer by removing said c-face sapphire substrate from a bottom surface deep enough to reach said grooves;

dividing said photo-diode built-in Si wafer by dicing into discrete pellets; and

assembling a resulting GaN semiconductor laser chip on a package.

15. The method for manufacturing a semiconductor device as claimed in claim 14, wherein said c-face sapphire substrate is removed from said bottom surface by lapping said c-face sapphire substrate from said bottom surface.

16. The method for manufacturing a semiconductor device as claimed in claim 14, wherein said c-face sapphire substrate is removed from said bottom surface by dicing said c-face sapphire substrate from said bottom surface.