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Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal

  • US 6,281,121 B1
  • Filed: 03/06/1998
  • Issued: 08/28/2001
  • Est. Priority Date: 03/06/1998
  • Status: Expired due to Term
First Claim
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1. A damascene metal interconnect for a semiconductor integrated circuit, comprising:

  • a dielectric material;

    a damascene structure etched in the dielectric material;

    a first barrier material deposited on the damascene structure;

    a second barrier material applied to the first barrier material using a highly directional deposition technique, wherein said second barrier material is a refractory metal; and

    a metalization layer deposited over the damascene structure, wherein said metalization layer consists essentially of a (111) crystal oriented structure, and wherein the metalization layer comprises a member selected from the group consisting of copper, aluminum, and alloys thereof.

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