Methods and systems for forming metal-containing films on substrates

• US 6,281,124 B1
• Filed: 09/02/1998
• Issued: 08/28/2001
• Est. Priority Date: 09/02/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US09/146,003
• Time in Patent Office: 1,091 Days
• Field of Search: 438/681, 438/FOR.405, 427/99, 427/123, 427/126.1, 148/DIG.110
• US Class Current: 438/681
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a precursor composition comprising one or more complexes of the formula;

2. The method of claim 1 wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.

3. The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.

4. The method of claim 2 wherein the precursor composition is vaporized in the presence of a carrier gas.

5. The method of claim 2 wherein the precursor composition is vaporized in the presence of a reaction gas.

6. The method of claim 5 wherein the reaction gas is selected from the group of H₂, SiH₄, Si₂H₆, NH₃, N₂H₄, PH₃, AsH₃, GeH₄, t-BuSbMe₂, H₂S, H₂Se, Te(allyl)₂, and combinations thereof.

7. The method of claim 1 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₃₀)organic group.

8. The method of claim 1 wherein the complex is a monomer.

9. The method of claim 1 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

10. The method of claim 1 wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

11. The method of claim 1 wherein the precursor composition is a liquid.

12. The method of claim 1 wherein the metal is a Group VB metal.

13. The method of claim 12 wherein the metal is vanadium.

14. The method of claim 1 wherein the metal-containing film is a Group IVB, VB, or VIB metal alloy film.

17. The method of claim 14 wherein the precursor composition is liquid.

15. A method of forming a film on a substrate, the method comprising:

providing a substrate;

providing a precursor composition comprising one or more complexes of the formula;

16. The method of claim 15 wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.