Methods for preparing ruthenium oxide films

• US 6,281,125 B1
• Filed: 05/17/2000
• Issued: 08/28/2001
• Est. Priority Date: 08/27/1998
• Status: Expired due to Term

• Current Assignee: Conversant Intellectual Property Management Inc (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A., Marsh, Eugene P.
• Primary Examiner(s): MEEKS, TIMOTHY HOWARD
• Application Number:
  US09/573,034
• Time in Patent Office: 468 Days
• Field of Search: 427/576, 427/584, 427/255.31, 427/99, 438/681, 438/686, 438/758, 438/778
• US Class Current: 438/681
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 28/60 Electrodes

Abstract

The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO)₃ wherein “diene” refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereof, or derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O.

Claims

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a liquid precursor composition comprising one or more compounds of the formula;

2. The method of claim 1 wherein the temperature of the substrate or substrate assembly is about 130°

C. to about 300°

C.

3. The method of claim 1 wherein the temperature of the substrate or substrate assembly is about 140°

C. to about 180°

C.

4. The method of claim 3 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10⁻

3 torr to about 1 atmosphere.

5. The method of claim 4 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.

6. The method of claim 1 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.

7. The method of claim 1 wherein vaporizing the liquid precursor comprises using a technique selected from the group of flash vaporization, bubbling, microdroplet formation, and combinations thereof.

8. The method of claim 1 wherein the semiconductor substrate or substrate assembly comprises a silicon wafer.

9. The method of claim 1 wherein the precursor composition is vaporized in the presence of at least one carrier gas.

10. The method of claim 1 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

11. The method of claim 10 wherein the reaction gas is an oxidizing gas.

12. The method of claim 11 wherein the oxidizing gas is selected from the group of O₂, N₂O, O₃, NO, NO₂, H₂O₂, H₂O, and combinations thereof.

13. The method of claim 1 wherein the diene derivative is a fluorinated diene.

14. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly, which is at a temperature of about 130°

C. to about 300°

C., contained within a reaction chamber having a pressure of about 10<sup>−

3</sup> torr to about 1 atmosphere;

providing a liquid precursor composition at a temperature of about 20°

C. to about 50°

C., the precursor composition comprising one or more compounds of the formula

15. The method of claim 14 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

16. The method of claim 14 wherein the diene derivative is a fluorinated diene.

17. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a liquid precursor composition comprising one or more compounds of the formula;

18. The method of claim 17 wherein the annealing step is carried out at a temperature of about 300°

C. to about 1000°

C.

19. The method of claim 18 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

20. The method of claim 17 wherein the diene derivative is a fluorinated diene.

21. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings;

providing a liquid precursor composition comprising one or more compounds of the formula;

22. The method of claim 21 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

23. The method of claim 21 wherein the diene derivative is a fluorinated diene.

24. A method of forming a ruthenium oxide film on a substrate, the method comprising:

providing a substrate;

providing a liquid precursor composition comprising one or more compounds of the formula;

25. The method of claim 24 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

26. The method of claim 24 wherein the diene derivative is a fluorinated diene.

27. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings, which is at a temperature of about 150°

C. to about 350°

C., wherein the semiconductor substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10<sup>−

3</sup> torr to about 1 atmosphere;

providing a liquid precursor composition at a temperature of about 20°

C. to about 50°

C., the precursor composition comprising one or more compounds of the formula;

28. The method of claim 27 wherein forming a ruthenium oxide film is done in the presence of at least one reaction gas.

29. The method of claim 27 wherein the diene derivative is a fluorinated diene.