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Dielectric cure for reducing oxygen vacancies

  • US 6,281,142 B1
  • Filed: 06/04/1999
  • Issued: 08/28/2001
  • Est. Priority Date: 06/04/1999
  • Status: Expired due to Term
First Claim
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1. A method of reducing oxygen vacancies in a high dielectric constant capacitor comprising:

  • depositing a first electrode on a semiconductor substrate;

    depositing a high constant dielectric above the first electrode, the high constant dielectric having a plurality of oxygen vacancies therein;

    applying an electrical bias to the high constant dielectric wherein the polarity of the electrical bias causes the oxygen vacancies to migrate towards the surface of the high constant dielectric; and

    plasma treating the high constant dielectric with a plurality of oxygen ions at a temperature below 500°

    C. wherein the oxygen ions react to fill at least a portion of the oxygen vacancies from the high constant dielectric.

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