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Capacitively coupled RF-plasma reactor

  • US 6,281,469 B1
  • Filed: 07/23/1999
  • Issued: 08/28/2001
  • Est. Priority Date: 01/17/1997
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a workpiece based on a silicon wafer substrate or a flat display with a substrate, comprising:

  • (a) providing first and second extended electrode arrangements mutually and substantially constantly spaced and substantially enclosing a plasma reaction volume within a reactor chamber;

    (b) subdividing said first of said electrode arrangements into electrically mutually isolated subelectrodes;

    (c) commonly connecting a first group of said subelectrodes to a common first electric input;

    (d) commonly connecting a second group of said subelectrodes to a second electric input independent of said first electric input; and

    (e) introducing said substrate onto said second electrode arrangement;

    (f) operatively connecting both said first and second electric inputs to one common Rf signal generator via respective signal adjusting unite;

    (g) generating by said Rf signal generation an Rf plasma discharge within said plasma reaction volume; and

    (h) controlling ion bombardment on and along said substrate by respective signal adjusting units operatively connected to said first and second electric inputs.

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