Gate insulated field effect transistors and method of manufacturing the same
First Claim
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1. A liquid crystal device comprising:
- a substrate having an insulating surface;
a plurality of switching elements provided over said substrate;
a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate;
a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction;
an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines;
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes.
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Abstract
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.
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Citations
66 Claims
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1. A liquid crystal device comprising:
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a substrate having an insulating surface;
a plurality of switching elements provided over said substrate;
a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate;
a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction;
an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines;
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A liquid crystal device comprising:
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a substrate having an insulating surface;
a plurality of switching elements provided over said substrate;
a plurality of first signal lines extending in a first direction over said substrate;
a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction;
an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines;
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A liquid crystal device comprising:
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a substrate having an insulating surface;
at least one switching element provided over said substrate;
at least one signal line for supplying signals to said at least one switching element;
an interlayer insulating film comprising an organic material over said substrate covering said at least one switching element and said at least one signal line;
at least one pixel electrode formed over said interlayer insulating film; and
a liquid crystal layer adjacent to said pixel electrode, wherein at least one signal line extends below a middle portion of said at least one pixel electrode. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A liquid crystal device comprising:
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a substrate having an insulating surface;
a plurality of switching elements provided over said substrate;
a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate;
a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction;
an interlayer insulating film formed over the plurality of switching elements;
a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes. - View Dependent Claims (23, 24, 25, 26)
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27. A liquid crystal device comprising:
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a substrate having an insulating surface;
a plurality of switching elements provided over said substrate;
a plurality of first signal lines extending in a first direction over said substrate;
a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction;
an interlayer insulating film formed over the plurality of switching elements;
a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above. - View Dependent Claims (28, 29, 30, 31)
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32. A liquid crystal device comprising:
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a substrate having an insulating surface;
at least one switching element provided over said substrate;
at least one signal line for supplying signals to said at least one switching element;
an interlayer insulating film over said substrate covering said at least one switching element and said at least one signal line;
at least one pixel electrode formed over said interlayer insulating film; and
a liquid crystal layer adjacent to said pixel electrode, wherein said at least one signal line extends below a middle portion of said at least one pixel electrode. - View Dependent Claims (33, 34, 35, 36)
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37. A liquid crystal device comprising:
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a plurality of switching elements arranged in a matrix form;
a plurality of signal lines having a first side and a second side electrically connected to said plurality of switching elements;
an organic resin film formed over the plurality of switching elements and the plurality of signal lines;
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes. - View Dependent Claims (38, 39)
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40. A liquid crystal device comprising:
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a plurality of switching elements arranged in a matrix form;
a plurality of first signal lines having a first side and a second side extending in a first direction and electrically connected to said switching elements;
a plurality of second signal lines extending in a second direction orthogonal to said first direction and electrically connected to said switching elements;
an interlayer insulating film formed over the plurality of switching elements;
an organic resin film formed on said interlayer insulating film;
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and
a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes. - View Dependent Claims (41, 42)
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43. A liquid crystal device comprising:
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a substrate having an insulating surface;
at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film;
at least one signal line electrically connected to said switching element and extending in one direction over said substrate;
an organic resin film formed over said switching element and said signal line;
at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element;
a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×
1020 atoms/cm3 to 20 atom %.- View Dependent Claims (44, 45)
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46. A liquid crystal device comprising:
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a substrate having an insulating surface;
at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor including source, drain and channel regions;
at least one signal line electrically connected to said switching element and extending in one direction over said substrate;
an organic resin film formed over said switching element and said signal line;
at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element;
a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×
1019 atoms/cm3.- View Dependent Claims (47, 48)
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49. A semiconductor device comprising:
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a substrate having an insulating surface;
at least one pixel electrode formed over said substrate;
at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×
1020 atoms/cm3 to 20 atom %.- View Dependent Claims (50, 51)
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52. A semiconductor device comprising:
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a substrate having an insulating surface;
at least one pixel electrode formed over said substrate;
at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film; and
an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×
1020 atoms/cm3 to 20 atom %.- View Dependent Claims (53, 54)
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55. A semiconductor device comprising:
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a substrate having an insulating surface;
at least one pixel electrode formed over said substrate;
at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film including source, drain and channel regions, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×
1019 atoms/cm3.- View Dependent Claims (56, 57)
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58. A semiconductor device comprising:
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a substrate having an insulating surface;
at least one pixel electrode formed over said substrate;
at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor including source, drain and channel regions; and
an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×
1019 atoms/cm3.- View Dependent Claims (59, 60)
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61. A semiconductor device comprising:
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a substrate having an insulating surface;
a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor;
a plurality of pixel electrodes electrically connected to said switching elements; and
a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×
1019 atoms/cm3.- View Dependent Claims (62)
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63. A semiconductor device comprising:
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a substrate having an insulating surface;
a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor;
an organic resin film formed over said plurality of switching elements; and
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and
a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×
1019 atoms/cm3.- View Dependent Claims (64)
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65. A semiconductor device comprising:
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a substrate having an insulating surface;
a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor;
an organic resin film formed over said plurality of switching elements; and
a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and
a driver circuit comprising at least one second thin film transistor formed over said substrate for driving said switching elements, wherein each of said first and second thin film transistors comprises a crystalline semiconductor film including a channel region, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the second thin film transistor is not higher than 7×
1019 atoms/cm3, andwherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the first thin film transistor is 1×
1020 atoms/cm3 to 20 atom %.- View Dependent Claims (66)
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Specification