Thermal enhancement approach using solder compositions in the liquid state
First Claim
1. An apparatus for maximizing thermal conduction and eliminating the adverse effects of operational thermal cycling comprising:
- an integrated circuit chip having a top surface and a bottom surface, and operational within a temperature range;
a bonding composition on a surface of said integrated circuit chip, said bonding composition having a solidus-liquidus temperature range encompassing said integrated circuit chip operational temperature range, such that said bonding composition is in a semi-molten state when power is applied to said integrated circuit chip and said chip is operating within the chip operational temperature range; and
, an elastomeric gasket, for use with non-hermetically sealed or semi-hermetically sealed electronic modules, of a polymeric ring fitted within a groove in said cover.
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Accused Products
Abstract
Solder compositions are introduced to interface between an IC chip and its associated heat exchanger cover. The solder compositions have a solidus-liquidus temperature range that encompasses the IC chip operational temperature range. The solder composition has the desired property of absorbing and rejecting heat energy by changing state or phase with each temperature rise and decline that result from temperature fluctuations associated with the thermal cycles of the integrated circuit chips. A path for high thermal conduction (low thermal resistance) from the IC chip to the heat exchanger to the ambient air is provided by an electronic module cover, configured as a cap with a heat exchanger formed or attached as a single construction, and made of the same material as the substrate, or made with materials of compatible thermal coefficients of expansion to mitigate the effects of vertical displacement during thermal cycling. The cap-heat exchanger cover is constructed to be compliant, and to contact both the IC chip and substrate.
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Citations
16 Claims
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1. An apparatus for maximizing thermal conduction and eliminating the adverse effects of operational thermal cycling comprising:
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an integrated circuit chip having a top surface and a bottom surface, and operational within a temperature range;
a bonding composition on a surface of said integrated circuit chip, said bonding composition having a solidus-liquidus temperature range encompassing said integrated circuit chip operational temperature range, such that said bonding composition is in a semi-molten state when power is applied to said integrated circuit chip and said chip is operating within the chip operational temperature range; and
,an elastomeric gasket, for use with non-hermetically sealed or semi-hermetically sealed electronic modules, of a polymeric ring fitted within a groove in said cover. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
a) Ga—
In composition of 70% In by weight, with a eutectic temperature of about 16.5°
C. and a liquidus of about 90°
C.;
b) Ga—
Zn composition of 85% Ga by weight, with a eutectic temperature of about 29.8°
C. and a liquidus of about 110°
C.;
or,c) Ga—
Sn composition of 40% Sn by weight, with a eutectic temperature of about 20°
C. and a liquidus of about 100°
C.
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8. The apparatus of claim 3 wherein said heat exchanger has a cavity within said bottom surface and over said integrated circuit chip top surface.
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9. The apparatus of claim 3 wherein said cover is a ceramic.
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10. The apparatus of claim 3 wherein said cap cover portion is about 1 mm to 2.5 mm in thickness, such that said cover is compliant, conforming to vertical displacements caused by different thermal expansions of materials.
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11. The apparatus of claim 1 wherein said bonding composition is about 13 to 17 mils in thickness.
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12. The apparatus of claim 3 wherein said thin film structure further comprises a deposition or evaporation of Cr—
- Ni—
Au layers.
- Ni—
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13. The apparatus of claim 12 wherein said thin film structure is comprised of a Cr layer 100 nm thick, a Ni layer 1000 nm thick, and a Au layer 50 nm thick.
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14. The apparatus of claim 5 wherein said bonding composition is used at the eutectic composition wherein said composition will melt completely at the eutectic temperature of the alloy.
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15. The apparatus of claim 6 wherein said bonding composition is used at the eutectic composition wherein said composition will melt completely at the eutectic temperature of the alloy.
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16. The apparatus of claim 7 wherein said bonding composition is used at the eutectic composition wherein said composition will melt completely at the eutectic temperature of the alloy.
Specification