Monitor method for testing probe pins

• US 6,281,694 B1
• Filed: 11/30/1999
• Issued: 08/28/2001
• Est. Priority Date: 11/30/1999
• Status: Expired due to Fees

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Tsai, Meng-Jin
• Primary Examiner(s): Metjahic, Safet
• Assistant Examiner(s): Nguyen, Jimmy
• Application Number:
  US09/449,662
• Time in Patent Office: 637 Days
• Field of Search: 324/158.1, 324/758, 324/754, 324/64, 324/762, 324/760, 324/761, 324/765, 361/88, 731/05, 73/12, 439/482
• US Class Current: 324/755.11
• CPC Class Codes: G01R 1/07307 with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
• CPC Class Codes: G01R 35/00 Testing or calibrating of apparatus covered by the other groups of this subclass

Abstract

A monitor method for testing probe pins is described in this invention. In accordance with the method of the present invention, a particular probe pin with short, deformity or unstable contact is identified.

Claims

1. A monitor method for testing probe pins, which is applied on a testing apparatus with a plurality of probe pins, comprising the following steps:

grouping the probe pins, wherein one group includes several probe pins;

floating the probe pins;

measuring resistance of each probe pin, wherein when a probe pin in a group is charged to measure a resistance thereof, other probe pins in the group are grounded;

checking the resistance of each probe pin in the group;

preparing a sample wafer with a thin film;

contacting the probe pins to the sample wafer;

charging the probe pins to measure contact resistance of each probe pin; and

checking the contact resistance of each probe pin.

2. The method of claim 1, wherein a material of the thin film is a low resistance material.

3. The method of claim 1, wherein the thin film is made from aluminum.

4. The method of claim 1, wherein the thin film is made from copper.

5. A monitor method for monitoring probe pins, which is for identifying a short between probe pins, comprising the following steps:

grouping the probe pins, wherein several probe pins are grouped in a group; and

charging the probe pins to measure resistance of each probe pin, wherein as a probe pin in a group is charged, other probe pins in the group are grounded.

6. The method of claim 5, wherein the probe pins are floated before charging the probe pins.

7. The method of claim 5, wherein as a probe pin in the group is charged, other probe pins in the group are grounded.

8. A monitor method for monitoring probe pins, which is for identifying a deformed or unstable probe pin, comprising the following steps:

grouping the probe pins, wherein a plurality of probe pins is grouped in a group;

preparing a sample wafer;

contacting the probe pins to the sample wafer; and

charging the probe pins to measure contact resistance of each probe pin.

9. The method of claim 8, wherein a thin film is coated on the sample wafer.

10. The method of claim 9, wherein a material of the thin film is a low resistance material.

11. The method of claim 9, wherein the thin film is made from aluminum.

12. The method of claim 9, wherein the thin film is made from copper.