Transistor with internal matching circuit

• US 6,281,756 B1
• Filed: 01/04/2000
• Issued: 08/28/2001
• Est. Priority Date: 07/07/1999
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Inoue, Akira, Goto, Seiki
• Primary Examiner(s): Mottola, Steven J.
• Assistant Examiner(s): Choe, Henry
• Application Number:
  US09/477,400
• Time in Patent Office: 602 Days
• Field of Search: 330/277, 330/286, 330/295, 330/302, 330/307
• US Class Current: 330/302
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01072 Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H03F 3/601 : using FET's, e.g. GaAs FET's H03F3/607, H03F3/608 take precedence
• CPC Class Codes: H03F 3/604 : using FET's

Abstract

An internally impedance matched transistor circuit prevents low frequency oscillation during high frequency band operation. Field effect transistors and corresponding oscillation-preventing stabilization circuits are located in the same package with the stabilization circuits close to the corresponding field effect transistors. Each oscillation-preventing stabilization circuit includes a resistor and a capacitor connected in series.

Claims

1. An internally impedance matched transistor circuit comprising, in a single package:

at least two internally matched transistor circuit units, each transistor circuit unit including;

a semiconductor element for signal processing a high frequency signal;

an input impedance matching unit having an input impedance matching circuit for impedance matching between said semiconductor element and an input terminal to which a high frequency signal is applied from an external source;

an output impedance matching unit having an output impedance matching circuit for impedance matching between said semiconductor element and an output terminal from which is output a high frequency signal processed by said semiconductor element; and

an oscillation preventing stabilization circuit unit having an oscillation preventing stabilization circuit comprising a resistor and a capacitor connected in a series circuit, the resistor being connected to ground through the capacitor and to an input of the semiconductor element, wherein the internally matched transistor circuit units are connected in parallel with the input terminals connected together and the output terminals connected together.

2. The internally impedance matched transistor circuit according to claim 1, including first and second internally impedance matched transistor circuit units and a second resistor connecting the oscillation preventing stabilization circuits of the first and second internally impedance matched transistor circuit units together.

3. The internally impedance matched transistor circuit according to claim 2, wherein the second resistor is connected between the resistors of the oscillation preventing stabilization circuits of the first and second internally impedance matched transistor circuit units.

4. The internally impedance matched transistor circuit according to claim 1, wherein the capacitors of the oscillation preventing stabilization circuits are surface oxidation MOS capacitors.

5. The internally impedance matched transistor circuit according to claim 1, wherein the capacitor and the resistor of each of the oscillation preventing stabilization circuits are commonly located with the respective input impedance matching units on a single MOS substrate.

6. The internally impedance matched transistor circuit according to claim 1, wherein each of the oscillation preventing stabilization circuits includes a second resistor and a second capacitor connected in a second series circuit, the second resistor being connected to ground through the second capacitor and the second resistor being connected to the input of the semiconductor element of the respective internally matched transistor circuit unit.