×

Method and apparatus for chemical vapor deposition of polysilicon

  • US 6,284,312 B1
  • Filed: 02/18/2000
  • Issued: 09/04/2001
  • Est. Priority Date: 02/19/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for production of bulk polysilicon by chemical vapor deposition comprising the steps of:

  • using a quartz envelope on a base plate with an inlet port and an outlet port, each said port communicating with the interior of said envelope, vertically emplacing within said envelope on said base plate an enclosed tubular silicon casing positioned so as to be communicating with said inlet port and said outlet port, raising to and maintaining the interior surface of said casing at the deposition temperature of a select combination of carrier gas and silicon reactant material using a heat source comprising at least a radiant heat source external of said quartz envelope, flowing said carrier gas ladened with said silicon reactant material through said inlet port into said enclosure, conducting within said tubular casing a CVD process utilizing said combination of carrier gas and silicon reactant material such that a bulk polysilicon layer is deposited upon the interior wall of said tubular casing, flowing gaseous byproducts of said CVD process out of said enclosure through said outlet port, removing as a bulk polysilicon product from said quartz envelope said tubular casing with said bulk polysilicon layer.

View all claims
  • 14 Assignments
Timeline View
Assignment View
    ×
    ×