Method for producing co-planar surface structures

• US 6,284,560 B1
• Filed: 12/18/1998
• Issued: 09/04/2001
• Est. Priority Date: 12/18/1998
• Status: Expired due to Term

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Jech, Joseph Jr., Lebens, John A., Brazas, John C. Jr.
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US09/215,973
• Time in Patent Office: 991 Days
• Field of Search: 216/2, 216/88, 216/89, 216/39, 438/488, 438/692, 438/693, 438/959, 438/974, 438/946, 438/48
• US Class Current: 438/48
• CPC Class Codes: B81C 1/00611 Processes for the planarisation of structures planarising depositions C23C, H01L
• CPC Class Codes: B81C 2201/0121 involving addition of material followed by removal of parts of said material, i.e. subtractive planarization

Abstract

A method for producing co-planar surface areas is disclosed. At first a first layer with at least one recess is provided. Onto the first layer a second layer is deposited over the entire area of the first layer wherein the second layer has a thickness greater than the depth of the recess. The second layer is composed of material different to the material of the first layer. The next step removes the second layer completely beyond the area of at least one recess. The remaining portion of the second layer is removed until the second layer is coplanar with the first layer.

Claims

1. A method for producing co-planar surface areas for micro-electromechanical systems structures comprising the steps of:

a) providing a first layer with at least two recesses over a substrate;

b) depositing a second layer over the entire area of the first layer wherein the second layer has a thickness greater than the depth of the recesses and is composed of a differing material to the first layer;

c) removing the second layer completely beyond the area of at least one recess;

d) removing the remaining portion of the second layer until the second layer is coplanar with the first layer; and

e) repeating step b) trough d) with differing material until all the recesses provided by the first layer are coplanar with the first layer fro producing co-planar areas for micro-electromechanical systems structures.

2. The method as claimed in claim 1 wherein the removing of any second layer is done such that there is overlap of successive layer with the first layer beyond the recess.

3. The method as claimed in claim 2 wherein the overlap of any second layer with the first layer beyond the recess is in the range between 0.2 and 5 microns.

4. The method as claimed in claim 1 wherein the step of removing of any of the second layers comprises:

providing an etch mask to protect the material of the second layer within the area of the recess;

etching the area of the second layer unprotected by the etch mask to completely expose the first layer; and

removing the etch mask.

5. The method as claimed in claim 1 wherein the step of removing the remaining portion of any of the second layer is provided by chemical-mechanical polishing.

6. The method as claimed in claim 1 wherein the step of removing the remaining portion of any of the second layer is provided by plasma etching.