×

Methods of forming smooth conductive layers for integrated circuit devices

  • US 6,284,646 B1
  • Filed: 08/19/1998
  • Issued: 09/04/2001
  • Est. Priority Date: 08/19/1997
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:

  • forming a first conductive layer on an integrated circuit substrate wherein the first conductive layer comprises aluminum;

    while forming the first conductive layer, monitoring a reflection index of the first conductive layer comprising aluminum; and

    terminating forming the first conductive layer comprising aluminum when the reflection index of the first conductive layer reaches a predetermined value.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×