Methods of forming smooth conductive layers for integrated circuit devices

• US 6,284,646 B1
• Filed: 08/19/1998
• Issued: 09/04/2001
• Est. Priority Date: 08/19/1997
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Leem, Hyeun-Seog
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): KESHAVAN, BELUR V
• Application Number:
  US09/136,471
• Time in Patent Office: 1,112 Days
• Field of Search: 257/750, 438/629, 438/679, 438/680, 438/681, 438/683, 438/685, 438/14, 438/16, 438/674, 438/688, 438/672
• US Class Current: 438/629
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method for forming a metal layer for an integrated circuit device includes forming a first conductive layer on an integrated circuit substrate. While forming the first conductive layer, a reflection index of the first conductive layer is monitored, and the formation of the first conductive layer is terminated when the reflection index of the first conductive layer reaches a predetermined value. More particularly, the first conductive layer can be an aluminum layer having a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.

Claims

1. A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:

forming a first conductive layer on an integrated circuit substrate wherein the first conductive layer comprises aluminum;

while forming the first conductive layer, monitoring a reflection index of the first conductive layer comprising aluminum; and

terminating forming the first conductive layer comprising aluminum when the reflection index of the first conductive layer reaches a predetermined value.

2. A method according to claim 1 wherein the step of terminating forming the first conductive layer is followed by the steps of:

forming a second conductive layer on the first conductive layer opposite the substrate;

while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and

terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.

3. A method according to claim 2 wherein the step of terminating forming the second conductive layer is followed by the step of:

patterning the first and second conductive layers to form a conductive line on the substrate, the conductive line comprising a laminated structure including the first and second patterned conductive layers.

4. A method according to claim 2 wherein the first and second conductive layers each have a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.

5. A method according to claim 2 wherein the first and second conductive layers comprise aluminum.

6. A method according to claim 2 wherein the first and second conductive layers are formed using chemical vapor deposition (CVD).

7. A method according to claim 2 wherein the step of forming the second conductive layer is preceded by the step of:

forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer.

8. A method according to claim 7 wherein the buffer layer comprises a material chosen from the group consisting of copper (Cu), zinc (Zn), titanium (Ti), tungsten (W), tantalum (Ta), titanium nitride (Ti—

N), tungsten nitride (Ti—

N), tantalum nitride (Ta—

N), titanium silicon nitride (Ti—

Si—

N), titanium boron nitride (Ti—

B—

N), titanium aluminum nitride (Ti—

Al—

N), tungsten boron nitride (W—

B—

N), tungsten silicon nitride (W—

Si—

N), tungsten aluminum nitride (W—

Al—

N), tantalum silicon nitride (Ta—

Si—

N), tantalum boron nitride (Ta—

B—

N), tantalum aluminum nitride (Ta—

Al—

N), and combinations thereof.

9. A method according to claim 7 wherein the buffer layer is formed using a technique chosen from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer epitaxy (ALE), and thermal treatment.

10. A method according to claim 7 wherein the step of forming the buffer layer comprises exposing the substrate to a gas chosen from the group consisting of silane (SiH₄), tungsten hexaflouride (WF₆), diborane hexaflouride (B₂H₆), and titanium chloride (TiCl₄).

11. A method according to claim 7 wherein the step of forming the buffer layer comprises maintaining the substrate at a temperature in the range of approximately 100°

C. to 350°

C. while forming the buffer layer.

12. A method according to claim 2 wherein the step of terminating forming the second conductive layer is followed by the steps of:

forming a third conductive layer on the second conductive layer opposite the substrate;

while forming the third conductive layer, monitoring a reflection index of the third conductive layer; and

terminating forming the third conductive layer when the reflection index of the third conductive layer reaches a third predetermined value.

13. A method according to claim 1 wherein the first conductive layer is formed using chemical vapor deposition.

14. A method according to claim 1 wherein the first conductive layer comprises aluminum.

15. A method according to claim 14 wherein the first conductive aluminum layer has a thickness in the range of approximately 500 Angstroms to 1500 Angstroms after terminating forming the first conductive aluminum layer.

16. A method according to claim 1 wherein the predetermined value of the reflection index of the first conductive layer is a maximum reflection index of the first conductive layer.

17. A method according to claim 1 wherein the step of forming the first conductive layer is preceded by the steps of:

forming an insulating layer on the integrated circuit substrate wherein the insulating layer has a contact hole therein exposing a portion of the integrated circuit substrate; and

forming a diffusion barrier layer on the exposed portion of the integrated circuit substrate and on a sidewall of the contact hole.

18. A method according to claim 17 wherein the diffusion barrier layer comprises a material chosen from the group consisting of copper (Cu), zinc (Zn);

titanium (Ti), tungsten (W), tantalum (Ta), titanium nitride (Ti—

N), tungsten nitride (Ti—

N), tantalum nitride (Ta—

N), titanium silicon nitride (Ti—

Si—

N), titanium boron nitride (Ti—

B—

N), titanium aluminum nitride (Ti—

Al—

N), tungsten boron nitride (W—

B—

N), tungsten silicon nitride (W—

Si—

N), tungsten aluminum nitride (W—

Al—

N), tantalum silicon nitride (Ta—

Si—

N), tantalum boron nitride (Ta—

B—

N), tantalum aluminum nitride (Ta—

Al—

N), and combinations thereof.

19. A method according to claim 17 wherein the diffusion barrier layer is formed using a technique chosen from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer epitaxy (ALE), and thermal treatment.

20. A method according to claim 17 wherein the step of forming the diffusion barrier layer comprises exposing the substrate to a gas chosen from the group consisting of silane (SiH₄), tungsten hexaflouride (WF₆), diborane hexaflouride (B₂H₆), and titanium chloride (TiCl₄).

21. A method according to claim 17 wherein the step of forming the diffusion barrier layer comprises maintaining the substrate at a temperature in the range of approximately 100°

C. to 350°

C. while forming the diffusion barrier layer.

22. A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:

forming a first conductive layer on an integrated circuit substrate;

while forming the first conductive layer, monitoring a reflection index of the first conductive layer;

terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value;

forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness less than a thickness of the first conductive layer;

after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate;

while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and

terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.

23. A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:

forming a first conductive layer on an integrated circuit substrate;

while forming the first conductive layer, monitoring a reflection index of the first conductive layer;

terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value;

forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness of no more than approximately 100 Angstroms;

after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate;

while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and

terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.

24. A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:

forming a first aluminum layer on the integrated circuit substrate wherein the step of forming the first aluminum layer comprises,

monitoring a reflection index of the first aluminum layer while forming the first aluminum layer, and

terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value;

forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum; and

forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.

25. A method according to claim 24 wherein the first and second aluminum layers each have thicknesses in the range of approximately 500 Angstroms to 1500 Angstroms.

26. A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:

forming a first aluminum layer on the integrated circuit substrate;

forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness of not more than approximately 100 Angstroms, and

forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.

27. A method according to claim 26 wherein the step of forming the first aluminum layer comprises:

monitoring a reflection index of the first aluminum layer while forming the first aluminum layer; and

terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value.

28. A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:

forming a first aluminum layer on the integrated circuit substrate;

forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness less than a thickness of the first aluminum layer; and

forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.