Method for controlling the shape of the etch front in the etching of polysilicon

• US 6,284,665 B1
• Filed: 12/17/1999
• Issued: 09/04/2001
• Est. Priority Date: 08/31/1998
• Status: Expired due to Fees

• Current Assignee: Bradmark, Inc.
• Original Assignee: Applied Materials Incorporated
• Inventors: Grimbergen, Michael, Lill, Thorsten
• Primary Examiner(s): Utech, Benjamin L.
• Assistant Examiner(s): Champagne, Donald L.
• Application Number:
  US09/465,951
• Time in Patent Office: 627 Days
• Field of Search: 438/710, 438/713, 438/719
• US Class Current: 438/710
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H10B 12/038 the capacitor being in a trench in the substrate

Abstract

The present disclosure pertains to our discovery that the use of a particular combination of etchant gases results in the formation of a substantially flat etch front for polysilicon etching applications. In general, the process of the invention is useful for controlling the shape 104 of the etch front during the etchback of polysilicon. Typically, the process comprises isotropically etching the polysilicon using a plasma produced from a plasma source gas comprising a particular combination of reactive species which selectively etch polysilicon. The plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. A preferred method of the invention, used to perform recess etchback of a polysilicon-filled trench in a substrate, comprises the following steps: a) providing a trench formed in a semiconductor structure, wherein the structure includes a substrate, at least one gate dielectric layer overlying a surface of the substrate, and at least one etch barrier layer overlying the gate dielectric layer; b) forming a conformal dielectric film overlying the etch barrier layer and the sidewall and bottom of the trench; c) filling the trench with a layer of polysilicon which overlies the conformal dielectric film; and d) isotropically etching the polysilicon back to a predetermined depth within the trench using a plasma produced from a plasma source gas comprising a reactive species which selectively etches polysilicon, wherein the plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. Also disclosed herein is a method of forming a trench capacitor in a single-crystal silicon substrate, the trench capacitor including a dielectric collar and a buried strap.

Claims

1. A method of controlling a shape of an etch front during plasma etching of polysilicon within a recess, wherein said etch front is W-shaped, and wherein said method comprises controlling the composition of a plasma source gas used to etch said polysilicon, so that said plasma source gas includes from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from the group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof.

2. The method of claim 1, wherein about 10% by volume of said plasma source gas comprises an additive gas selected from the group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof.

3. The method of claim 1, wherein from about 5% to about 20% by volume of said plasma source gas comprises an additive gas including a bromine-comprising gas and a chlorine-comprising gas.

4. The method of claim 1, wherein said fluorine-comprising gas is selected from the group consisting of SF₆, SF₄, S₂F₂, S₂F₁₀, and combinations thereof.

5. The method of claim 1, wherein said plasma source gas further comprises an essentially nonreactive gas.

6. A method of controlling a shape of an etch front during plasma etching of polysilicon within a recess, wherein said etch front is W-shaped, wherein said method comprises controlling the composition of a plasma source gas used to etch said polysilicon, so that said plasma source gas includes from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from the group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof, and wherein said polysilicon is plasma etched to a feature size of about 0.25 μ

m or less.

7. The method of claim 6, wherein about 10% by volume of said plasma source gas comprises an additive gas selected from the group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof.

8. The method of claim 6, wherein from about 5% to about 20% by volume of said plasma source gas comprises an additive gas including a bromine-comprising gas and a chlorine-comprising gas.

9. The method of claim 6, wherein said fluorine-comprising gas is selected from the group consisting of SF₆, SF₄, S₂F₂, S₂F₁₀, and combinations thereof.

10. The method of claim 6, wherein said plasma source gas further comprises an essentially nonreactive gas.

11. A method of controlling ofthe shape of an etch front during plasma etching of polysilicon within a recess, to cause the shape ofthe etch front to be W shaped, wherein said method comprises etching said polysilicon using a plasma produced from a plasma source gas which includes from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from the group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof.

12. The method of claim 11, wherein said recess is a trench.

13. The method of claim 12, wherein said trench exhibits at least one dimension which is less than about 0.25 μ

m.

14. The method of claim 11, or claim 12, or claim 13, wherein from about 5% to about 20% by volume of said plasma source gas comprises an additive gas including a bromine-comprising gas and a chlorine-comprising gas.