Plasma polishing method

• US 6,284,668 B1
• Filed: 02/02/2000
• Issued: 09/04/2001
• Est. Priority Date: 08/10/1995
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Imahashi, Issei
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US09/495,863
• Time in Patent Office: 580 Days
• Field of Search: 438/710, 438/711, 438/714, 438/716, 438/729, 216/38
• US Class Current: 438/716
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A plasma polishing apparatus has a table which holds a wafer and is rotated at a high speed by a drive base. The drive base is supported on a horizontal drive stage, so that the table is linearly and reciprocally movable. A plasma generator for converting a process gas into a plasma by high-frequency inductive coupling is arranged above the table. The plasma generator has an outlet port from which the plasma flows out toward the target surface of the wafer. The plasma from the outlet port is drawn upon high-speed rotation of the wafer, diffused as a laminar flow on the target surface of the wafer, and uniformly polishes the entire target surface.

Claims

1. A plasma polishing method of polishing a surface of a target object, comprising the steps of:

holding the target object by a table so as to expose the surface of the target object;

converting a process gas into a plasma and supplying the plasma onto the surface of the target object from an outlet port substantially smaller than the surface of the target object; and

rotating said table together with the target object at a high speed, such that the plasma is drawn and diffused in laminar flow state on the surface of the target object by a centrifugal force generated upon rotation of the surface, and polishes the surface during diffusion in the surface.

2. The method according to claim 1, further comprising the step of moving said table together with the target object in a direction substantially parallel to the surface of the target object supported by said table during rotation of said table and the target object.

3. The method according to claim 2, wherein said table is moved in accordance with a program inputted in a controller.

4. The method according to claim 2, wherein the surface of the target object is substantially entirely scanned by said outlet port.

5. The method according to claim 2, wherein a relative moving speed between said outlet port and the surface of the target object is reduced nearer a peripheral portion of the surface.

6. The method according to claim 1, wherein the plasma is supplied from said outlet port while said outlet port is arranged within a contour of the surface of the target object.

7. The method according to claim 1, wherein said process gas is converted into the plasma to a substantially atmospheric pressure.

8. The method according to claim 1, wherein the plasma is caused to flow as a laminar flow substantially parallel to one surface of the target object.

9. The method according to claim 1, wherein the plasma is caused to collide with projecting portions on the surface of the target object.

10. The method according to claim 1, wherein the plasma is caused to collide with projecting portions on the surface of the target object.

11. The method according to claim 1, wherein the plasma is generated by means of high-frequency inductive coupling.

12. The method according to claim 1, wherein the plasma is supplied from said outlet port while said table and the target object are rotated at 1,000 rpm at least.

13. The method according to claim 12, wherein the plasma is supplied from said outlet port while said table and the target object are rotated at 1,000 to 7,000 rpm.

14. The method according to claim 12, wherein the plasma is supplied from said outlet port while said table and the target object are rotated at 4,000 rpm at least.

15. The method according to claim 14, wherein the plasma is supplied from said outlet port while said table and the target object are rotated at 4,000 to 6,000 rpm.

16. The method according to claim 1, wherein said outlet port has an area of {fraction (1/100)} the surface of the target object at most.

17. The method according to claim 1, wherein the plasma is supplied from said outlet port while a distance between the surface of the target object and said outlet port is set to be 50 mm at most.

18. The method according to claim 1, wherein the plasma is supplied from said outlet port while a distance between the surface of the target object and said outlet port is set to be 5 to 30 mm.

19. The method according to claim 11, further comprising steps of detecting an end point of polishing on the surface of the target object, and stopping the polishing based on the end point.

20. The method according to claim 19, wherein the end point is determined by observing the surface of the target object.

21. The method according to claim 1, wherein a rectifying ring surrounding the target object is arranged so as to form an extended pseudo-peripheral portion of the surface of the target object.

22. The method according to claim 1, further comprising a step of exhausting an air in a direction substantially parallel to the surface of the target object, while polishing the surface.