Active Matry Display

• US 6,285,042 B1
• Filed: 09/12/1997
• Issued: 09/04/2001
• Est. Priority Date: 10/29/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukunaga, Takeshi, Ohtani, Hisashi, Zhang, Hongyong, Miyanaga, Akiharu
• Primary Examiner(s): Lee, Eddie C.
• Assistant Examiner(s): Warren, Matthew E
• Application Number:
  US08/928,514
• Time in Patent Office: 1,453 Days
• Field of Search: 257/350, 257/64, 257/72, 257/75, 257/291, 257/607, 257/59, 257/65, 257/70, 257/66, 257/74
• US Class Current: 257/66
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: Y10S 148/016 Catalyst

Abstract

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

Claims

1. An active matrix display device having a plurality of thin film transistors formed on an insulating surface, each of said thin film transistors having a semiconductive active region comprising a crystalline silicon film formed on said insulating surface, wherein said crystalline silicon film contains a catalyst element which promotes a crystallization of an amorphous silicon film at a concentration not higher than 1×

10¹⁹ atoms/cm³,

wherein a surface of said silicon film has at least one of planes expressed by {hk1} (h+k=1) and wherein the planes expressed by {hk1} are {110}, {123}, {134}, {235}, {145}, {156}, {257}, and {167}.

2. An active matrix display device according to claim 1 wherein said catalyst element comprises a material selected from the group consisting of nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), indium (In), tin (Sn), phosphorus (P), arsenic (As), and antimony (Sb).

3. The device of claim 1 wherein said device includes at least one electric junction selected from the group consisting of PI, PN and NI.

4. An active matrix display device according to claim 1 wherein said crystalline silicon film includes crystals having <

111>

axes and a crystal growth direction of said crystalline silicon film is approximately aligned with <

111>

axes of said crystals.

6. A semiconductor device according to claim 1 wherein said crystalline silicon is 100-1500 Å

thick.

5. A semiconductor device including an active region comprising a crystalline silicon film formed on a substrate, wherein a surface of said silicon film has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes, an said crystalline silicon film contains a catalyst element which promotes a crystallization of an amorphous silicon film at a concentration not higher than 1×

10¹⁹ atoms/cm³,

wherein a surface of said silicon film does not have a {111} plane.

7. A semiconductor device according to claim 5 wherein said crystalline silicon is 100-1500 Å

thick.

8. A semiconductor device having a thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising:

a crystalline semiconductor layer comprising silicon formed on said insulating surface;

a channel region formed within said crystalline semiconductor layer; and

a gate electrode adjacent to said channel region with a gate insulating layer interposed therebetween,

wherein said crystalline semiconductor layer contains a catalyst which is capable of promoting a crystallization of an amorphous silicon at a concentration not higher than 1×

10¹⁹ atoms/cm³, and said crystalline semiconductor layer comprises silicon crystals extending uniformly in one direction parallel with said insulating surface,

wherein a surface of said semiconductor layer has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes, and said semiconductor layer has a <

111>

axis in parallel with said insulating surface.

9. A semiconductor device according to claim 8 wherein said concentration of said catalyst contained in said semiconductor layer is within a range of 1×

10¹⁶ to 1×

10¹⁹ atoms/cm<sup>−

3</sup>.

10. A semiconductor device according to claim 8 wherein said semiconductor layer is 100 to 1500 A thick.

11. A semiconductor device according to claim 8 wherein said catalyst is a metal selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

12. A semiconductor device including at least one selected from the group consisting of a thin film transistor, a diode and a photosensor, said semiconductor device having an active region comprising a crystalline silicon film formed on a substrate, wherein a surface of said silicon film has at least one of planes {111}, and those expressed by {hk1} (h+k=1), and said crystalline silicon film contains a catalyst element which promotes a crystallization of an amorphous silicon film at a concentration not higher than 1×

10¹⁹ atoms/cm³.

13. A semiconductor device according to claim 12 wherein said active region is 100 to 1500 Å

thick.

14. A semiconductor device according to claim 12 wherein said catalyst element is a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

15. An active matrix display device having a plurality of thin film transistors formed on an insulating surface, each of said thin film transistors comprising:

a semiconductor active region comprising crystalline silicon formed on said insulating surface;

a channel region formed within said semiconductor active region; and

a gate electrode formed over said channel region with a gate insulating layer therebetween,

wherein said channel region contains a catalyst element for promoting a crystallization of silicon at a concentration not higher than 1×

10¹⁹ atoms/cm<sup>−

3</sup>,

wherein a surface of said channel region has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes, and said channel region has a <

111>

axis in parallel with said insulating surface.

16. A semiconductor device according to claim 15 wherein said semiconductor active region is 100 to 1500 Å

thick.

17. A semiconductor device according to claim 15 wherein said catalyst element is a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

18. A semiconductor device comprising:

an active region comprising a crystalline silicon film formed on a substrate,

a channel region formed within said active region; and

a gate electrode formed over said channel region with a gate insulating layer therebetween,

wherein a surface of said silicon film has at least one of planes {111}, and those expressed by {hk1} (h+k=1), and

wherein said crystalline silicon film contains a catalyst element for promoting a crystallization of an amorphous silicon film at a concentration not higher than 1×

10¹⁹ atoms/cm<sup>−

3</sup>.

19. A semiconductor device according to claim 18 wherein said active region is 100 to 1500 Å

thick.

20. A semiconductor device according to claim 18 wherein said catalyst element is a material selected from the group consisting Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

21. A semiconductor device having a thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising:

a crystalline semiconductor layer comprising silicon formed on said insulating surface;

a channel region formed within said crystalline semiconductor layer; and

a gate electrode over said channel region with a gate insulating layer interposed therebetween,

wherein said crystalline semiconductor layer contains a catalyst capable of promoting a crystallization of an amorphous silicon at a concentration not higher than 1×

10¹⁹ atoms/cm³, and said crystalline semiconductor layer comprises silicon crystals extending uniformly in one direction parallel with said insulating surface,

wherein a surface of said semiconductor layer has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes, but does not have a {111} plane.

22. A semiconductor device according to claim 21 wherein said crystalline semiconductor layer is 100 to 1500 Å

thick.

23. A semiconductor device according to claim 21 wherein said catalyst element is a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

24. A semiconductor device comprising:

a crystalline semiconductor film comprising silicon crystals formed on an insulating surface of a substrate wherein said silicon crystals have <

111>

axis in parallel with said insulating surface,

wherein a concentration of a catalyst element contained in said crystalline semiconductor film for promoting crystallization of said silicon crystals is 1×

10¹⁹ atoms/cm³ or lower,

wherein a surface of said semiconductor film has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes, and said semiconductor layer has a <

111>

axis in parallel with said insulating surface.

25. A semiconductor device according to claim 24 wherein each of said silicon crystals is single crystal.

26. A semiconductor device according to claim 24 wherein said crystalline semiconductor film is hydrogenated.

27. A semiconductor device according to claim 24 wherein said substrate is a glass substrate.

28. A semiconductor device according to claim 24 wherein said catalyst element is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony.

29. A semiconductor device according to claim 24 wherein said catalyst element is selected from the groups VIII, IIIb, IVb and Vb.

30. A semiconductor device according to claim 24 wherein said concentration is measured by SIMS.

31. A semiconductor device comprising:

a crystalline semiconductor film comprising silicon crystals formed on an insulating surface of a substrate wherein said silicon crystals have <

111>

axis in parallel with said insulating surface and a surface of said crystalline semiconductor film does not have a {111} plane,

wherein a concentration of a catalyst element contained in said crystalline semiconductor film for promoting crystallization of said silicon crystals is 1×

10¹⁹ atoms/cm³ or lower.

32. A semiconductor device according to claim 31 wherein each of said silicon crystals is single crystal.

33. A semiconductor device according to claim 31 wherein said crystalline semiconductor film is hydrogenated.

34. A semiconductor device according to claim 31 wherein said catalyst element is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorus, arsenic and antimony.

35. A semiconductor device according to claim 31 wherein said catalyst element is selected from groups VIII, IIb, IVb and Vb.

36. A semiconductor device comprising:

a crystalline semiconductor film comprising silicon crystals formed on an insulating surface of a substrate wherein a surface of said crystalline semiconductor film has at least one of {110}, {123}, {134}, {235}, {145}, {156}, {257} and {167} planes but not a {111} plane,

wherein a concentration of a catalyst element contained in said crystalline semiconductor film for promoting crystallization of said silicon crystals is 1×

10¹⁹ atoms/cm³ or lower.

37. A semiconductor device according to claim 36 wherein each of said silicon crystals is single crystal.

38. A semiconductor device according to claim 36 wherein said crystalline semiconductor film is hydrogenated.

39. A semiconductor device according to claim 36 wherein said catalyst element is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorus, arsenic and antimony.

40. A semiconductor device according to claim 36 wherein said catalyst element is selected from groups VIII, IIIb, IVb and Vb.

41. A semiconductor device comprising:

a crystalline semiconductor film comprising silicon crystals formed on a insulating surface of a substrate wherein a surface of said crystalline semiconductor film has a {110} plane but not a {111} plane,

wherein a concentration of a catalyst element contained in said crystalline semiconductor film for promoting crystallization of said silicon crystals is 1×

10¹⁹ atoms/cm³ or lower.