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Semiconductor device combining a MOSFET structure and a vertical-channel trench-substrate field effect device

  • US 6,285,057 B1
  • Filed: 11/17/1999
  • Issued: 09/04/2001
  • Est. Priority Date: 11/17/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate of a first conductivity type;

    an MOSFET device structure formed in the semiconductor substrate; and

    at least one vertical-channel trench-substrate field effect device formed in the semiconductor substrate, the vertical-channel trench-substrate field effect device including a vertical-channel region formed vertically beneath the MOSFET structure.

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