Precision programming of nonvolatile memory cells

• US 6,285,598 B1
• Filed: 03/13/2000
• Issued: 09/04/2001
• Est. Priority Date: 03/06/1997
• Status: Expired due to Term

• Current Assignee: Silicon Storage Technology Incorporated (Microchip Technology Incorporated)
• Original Assignee: Silicon Storage Technology Incorporated (Microchip Technology Incorporated)
• Inventors: Korsh, George J., Khan, Sakhawat M.
• Primary Examiner(s): Ho, Hoai V.
• Application Number:
  US09/523,828
• Time in Patent Office: 540 Days
• Field of Search: 365/185.28, 365/185.18, 365/185.22, 365/185.2, 365/185.01
• US Class Current: 365/185.28
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3454 Arrangements for verifying correct programming or for detecting overprogrammed cells
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 16/3468 Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
• CPC Class Codes: G11C 2211/5621 Multilevel programming verification
• CPC Class Codes: G11C 2211/5622 Concurrent multilevel programming of more than one cell
• CPC Class Codes: G11C 2211/5645 Multilevel memory with current-mirror arrangements
• CPC Class Codes: G11C 27/005 with non-volatile charge storage, e.g. on floating gate or MNOS
• CPC Class Codes: G11C 7/1048 Data bus control circuits, e.g. precharging, presetting, equalising

Abstract

An integrated circuit memory system and method for precision hot carrier injection programming of single or plurality of nonvolatile memory cells is described. Each program cycle is followed by a verify cycle. Precision programming is achieved by incrementally changing a programming current pulse flowing between the source and drain in the memory cell during successive program cycles and a constant current during successive verify cycles. Current control and voltage mode sensing circuitry reduces circuit complexity, reduces programming cell current, lowers power dissipation, and enables page mode operation. Precision programming is useful for multilevel digital and analog information storage.

Claims

1. An integrated circuit memory system comprising:

a control block controlling operations of said integrated circuit memory system;

a plurality of memory cells, each memory cell comprising;

a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate corresponding to input signals to said integrated circuit memory system;

circuit means, responsive to said control block, for applying a first set of preselected voltages to a source, drain and control gate of a selected memory cell in a first set of timed relationships and for controlling a programming current independently of said input signals, said programming current flowing between said source and drain during programming of said selected memory cell so that an amount of electric charge stored on a floating gate of said selected memory cell is precisely controlled.

2. The integrated circuit memory system of claim 1 wherein said first set of timed relationships are dependent upon characteristics of said memory cells.

3. The integrated circuit memory system of claim 1 wherein said first set of timed relationships are controllable by said control block.

4. The integrated circuit memory system of claim 3 wherein said first set of timed relationships are dependent upon characteristics of said memory cells.

5. The integrated circuit memory system of claim 1 wherein said circuit means iteratively applies said preselected voltages to said source, drain and control gate of said selected memory cell in said first set of timed relationships and controls said current independently of said input signals, said current flowing between said source and drain during programming of said selected memory cell.

6. The integrated circuit memory system of claim 3 wherein said circuit means iteratively applies said first set of preselected voltages to said source, drain and control gate of said selected memory cell in first set of timed relationships and controls said programming current independently of said input signals, said programming current flowing between said source and drain during programming of said selected memory cell.

7. The integrated circuit memory system of claim 1 wherein said circuit means applies a second set of preselected voltages to said source, drain and control gate of said selected memory cell in a second set of timed relationships and provides a constant verification current independently of said input signals, said verification current flowing between said source and drain after programming of said selected memory cell to verify whether said amount of charge stored in said floating gate of said selected memory cell corresponds to said input signals.

8. The integrated circuit memory system of claim 7 wherein said second set of timed relationships are dependent upon characteristics of said memory cells.

9. The integrated circuit memory system of claim 7 wherein said second set of timed relationships are controllable by said control block.

10. The integrated circuit memory system of claim 9 wherein said second set of timed relationships are dependent upon characteristics of said memory cells.

11. An integrated circuit memory system comprising:

a system control block;

an array of memory cells, each memory cell having a first terminal, a second terminal, a control gate and a floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate;

a first control block connected to a first terminal of a memory cell selected for programming;

a second control block connected to a second terminal of said memory cell; and

a third control block connected to a control gate of said memory cell;

wherein said first, second and third control blocks, responsive to said system control block, apply preselected voltages to said first terminal, second terminal and control gate of said selected memory cell in a first set of timed relationships and cooperatively control current flowing between said first terminal and said second terminal during programming operation of said selected memory cell so that an amount of electric charge stored on said floating gate is precisely controlled.

12. The integrated circuit memory system of claim 11 wherein said first set of timed relationships are dependent upon characteristics of said memory cells.

13. The integrated circuit memory system of claim 11 wherein said first set of timed relationships are controllable by said control block.

14. The integrated circuit memory system of claim 13 wherein said first set of timed relationships are dependent upon characteristics of said memory cells.

15. The integrated circuit memory system of claim 11 wherein said first, second and third control blocks, responsive to said system control block, apply preselected voltages to said first terminal, second terminal and control gate of said selected memory cell in a second set of timed relationships and cooperatively provide a constant current flowing between said first terminal and said second terminal after programming operation of said selected memory cell to verify said amount of charge stored in said floating gate of said selected memory cell.

16. The integrated circuit memory system of claim 15 wherein said second set of timed relationships are dependent upon characteristics of said memory cells.

17. The integrated circuit memory system of claim 15 wherein said second set of timed relationships are controllable by said control block.

18. The integrated circuit memory system of claim 17 wherein said second set of timed relationships are dependent upon characteristics of said memory cells.

19. The integrated circuit memory system of claim 15 wherein said first, second and third control blocks, responsive to said system control block, apply preselected voltages to said first terminal, second terminal and control gate of said selected memory cell in a third set of timed relationships and cooperatively provide a constant current flowing between said first terminal and said second terminal of said selected memory cell to determine said amount of charge stored in said floating gate of said selected memory cell for a read operation.

20. The integrated circuit memory system of claim 19 wherein said third set of timed relationships are dependent upon characteristics of said memory cells.

21. The integrated circuit memory system of claim 19 wherein said third set of timed relationships are controllable by said control block.

22. The integrated circuit memory system of claim 21 wherein said third set of timed relationships are dependent upon characteristics of said memory cells.

23. In an integrated circuit memory system having a plurality of memory cells, each memory cell comprising a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection corresponding to input signals to said integrated circuit memory system, a method for programming said memory cells comprising:

applying voltages to said source, drain, and control gate of a selected memory cell in a first set of timed relationships and controlling a current independently of said input signals, said current flowing between said source and drain of a memory cell so that an amount of electric charge stored on said floating gate of said selected memory cell is precisely controlled.

24. The programming method of claim 23 further comprising setting said first set of timed relationships from characteristics of said memory cells.

25. The programming method of claim 23 further comprising setting said first set of timed relationships by a control block in said integrated circuit memory system.

26. The programming method of claim 25 further comprising setting said first set of timed relationships from characteristics of said memory cells.

27. The programming method of claim 23 wherein said applying voltages step is performed iteratively.

28. The programming method of claim 23 further comprising:

applying voltages to said source, drain, and control gate of a selected memory cell in a second set of timed relationships and providing a constant current independently of said input signals, said constant current flowing between said source and drain after programming of said selected memory cell to verify said amount of electric charge stored on said floating gate of said selected memory cell corresponds to said input signals.

29. The programming method of claim 28 further comprising setting said second set of timed relationships from characteristics of said memory cells.

30. The programming method of claim 28 further comprising setting said second set of timed relationships by a control block in said integrated circuit memory system.

31. The programming method of claim 30 further comprising setting said second set of timed relationships from characteristics of said memory cells.

32. In an integrated memory system having an array of memory cells, each memory cell comprising a first terminal, a second terminal, a control gate and a floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection corresponding to input signals to said integrated circuit memory system, a method for programming a selected memory cell comprising:

applying erase voltages to said first terminal, said second terminal, and said control gate of said selected memory cell so that electric charge is removed from said floating gate to erase said selected memory cell;

applying preselected program voltages to said first terminal, second terminal, and control gate in a first set of timed relationships, and controlling the current flowing between said first terminal and said second terminal of said selected memory cell independently of any input signal voltages so that an amount of electric charge stored on said floating gate is precisely controlled to program said selected memory cell;

applying program verify voltages to said first terminal, second terminal and control gate in a second set of timed relationships, providing a constant current flowing between said first terminal and second terminal of said selected memory cell, and comparing a voltage at said second terminal of said selected memory cell with respect to a program reference voltage to verify said amount of charge stored in floating gate of said selected memory cell; and

repeating said program voltages and program verify voltages applying steps until a program verify voltages applying step verifies that said selected memory cell is programmed.

33. The programming method of claim 32 further comprising setting said first set of timed relationships from characteristics of said memory cells.

34. The programming method of claim 32 further comprising setting said first set of timed relationships by a control block in said integrated circuit memory system.

35. The programming method of claim 34 further comprising setting said first set of timed relationships from characteristics of said memory cells.

36. The programming method of claim 32 further comprising setting said second set of timed relationships from characteristics of said memory cells.

37. The programming method of claim 32 further comprising setting said second set of timed relationships by a control block in said integrated circuit memory system.

38. The programming method of claim 37 further comprising setting said second set of timed relationships from characteristics of said memory cells.

39. The programming method of claim 32 further comprising:

applying read voltages to said first terminal, second terminal and control gate in a third set of timed relationships, providing a constant current flowing between said first terminal and second terminal of said selected memory cell, and comparing a voltage at said second terminal of said selected memory cell with respect to a program reference voltage to read said amount of charge stored in floating gate of said selected memory cell.

40. The programming method of claim 39 further comprising setting said third set of timed relationships from characteristics of said memory cells.

41. The programming method of claim 39 further comprising setting said third set of timed relationships by a control block in said integrated circuit memory system.

42. The programming method of claim 41 further comprising setting said third set of timed relationships from characteristics of said memory cells.