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High-power external-cavity optically-pumped semiconductor laser

  • US 6,285,702 B1
  • Filed: 03/05/1999
  • Issued: 09/04/2001
  • Est. Priority Date: 03/05/1999
  • Status: Expired due to Term
First Claim
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1. A laser, comprising:

  • an OPS-structure having a gain-structure surmounting a mirror-structure, said gain-structure including a plurality of active layers having pump-light-absorbing layers therebetween, said active layers having a composition selected to provide emission of electromagnetic radiation at a predetermined fundamental-wavelength between about 425 nanometers and 1800 nanometers when optical-pump light is incident on said gain-structure, and said mirror-structure including a plurality of layers of alternating high and low refractive index and having an optical thickness of about one-quarter wavelength of said predetermined wavelength;

    a laser-resonator formed between said mirror-structure of said OPS-structure and a reflector spaced apart therefrom, said laser resonator having a longitudinal axis;

    an optical arrangement for delivering said pump-light to said gain-structure, thereby causing fundamental laser-radiation having said fundamental-wavelength to oscillate in said laser-resonator;

    a heat-sink arrangement for cooling said OPS-structure;

    an optically-nonlinear crystal located in said laser-resonator and arranged for frequency-doubling said fundamental laser-radiation thereby providing frequency-doubled radiation having a wavelength half of said fundamental-wavelength; and

    said laser-resonator, said optically nonlinear-crystal, said OPS-structure, said heat-sink arrangement and said optical pump-light-delivering arrangement selected and arranged such that said resonator delivers said frequency-doubled radiation as output-radiation having a wavelength between about 212 nanometers and 900 nanometers at an output-power greater than about 100 milliwatts.

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