Method of forming transparent contacts to a p-type GaN layer

• US 6,287,947 B1
• Filed: 06/08/1999
• Issued: 09/11/2001
• Est. Priority Date: 06/08/1999
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Maranowski, Steven A., Wierer, Jonathan Joseph Jr., Steigerwald, Daniel A., Ludowise, Michael J.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US09/327,948
• Time in Patent Office: 826 Days
• Field of Search: 257/99
• US Class Current: 438/606
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been deposited on the surface of the p-type GaN layer. In some applications, the oxidized metal provides sufficient lateral conductivity to eliminate the conventional requirement of a second highly conductive contact metal, such as gold. If the second contact metal is desired, an anneal in an oxygen-free environment is performed after deposition of the second layer. The anneal causes the second metal to penetrate the oxidized metal and to fuse to the surface of the p-type GaN layer. In a second embodiment, the oxidation occurs only after at least one of the two metals is deposited on the surface of the p-type GaN layer. In one application of the second embodiment, the two metals are deposited and the oxidation occurs in an environment that includes both water vapor and oxygen gas. In an alternative application of the second embodiment, the first metallic layer is deposited and then oxidized throughout its depth. The second material, such as gold, is evaporated on the first material and a re-anneal step is performed to drive the second metal through the oxidized first metal. In any of the applications of either embodiment, a pattern of windows may be formed in the resulting contact structure or in additional layers that are formed thereon.

Claims

1. A method of forming a light-transmissive contact of a light source comprising steps of:

forming at least one layer of p-type Gallium nitride (GaN) as one layer of an optoelectronic device;

selecting a metal to form a conductive light-transmissive layer on a surface of said p-type GaN layer; and

introducing said selected metal onto said surface as an oxidized material, such that said selected metal is oxidized before or during introduction of said selected metal onto said p-type GaN layer.

2. The method of claim 1 wherein said step of selecting a metal is a selection between nickel (Ni), a Group II metal and a transition metal, said step of introducing said selected metal thereby being executed as a step of depositing one of a selected metal oxide as NiO, a Group II metal oxide and a transition metal oxide.

3. The method of claim 2 further comprising steps of forming a layer of precious metal on said selected metal oxide and heat treating said selected metal oxide and said layer of precious metal, thereby enabling said precious metal to penetrate said selected metal oxide and diffuse to said p-type GaN layer.

4. The method of claim 2 wherein said step of depositing said selected metal oxide includes simultaneously introducing a precious metal onto said surface, thereby forming a layer that is a combination of said selected metal oxide and said precious metal.

5. The method of claim 4 wherein said step of simultaneously depositing said selected metal oxide and said precious metal includes one of reactively co-evaporating and reactively co-sputtering NiO and Au.

6. The method of claim 1 further comprising steps of:

forming a second metal on said selected metal;

diffusing said second metal through said selected metal; and

forming a layer of ITO to enhance lateral conductivity along said surface of said p-type GaN layer.

7. The method of claim 1 wherein said step of introducing said selected metal forms a seed layer and is followed by steps of:

forming a second layer of said selected metal on said oxidized selected metal;

depositing a layer of conductive material; and

annealing said seed layer, said second layer and said layer of conductive material to diffuse said conductive material to said p-type GaN layer.

8. The method of claim 1 further comprising steps of:

forming a layer of highly conductive material on said oxidized selected metal;

forming a second layer of said selected metal on said layer of highly conductive material; and

executing an anneal to oxidize said second layer and to diffuse said highly conductive material through said oxidized selected material to reach said surface of said p-type GaN layer.

9. The method of claim 1 wherein said step of introducing said selected metal includes depositing NiO using one of reactive evaporation and reactive sputtering, said depositing being followed by steps of:

depositing Au; and

annealing said NiO and Au in an environment that is substantially free of oxygen.

10. The method of claim 1 wherein said step of introducing said selected metal includes depositing NiO using one of reactive evaporation and reactive sputtering, said depositing being followed by steps of:

depositing conductive material; and

annealing said NiO and conductive material in an environment that is substantially free of water vapor, wherein p-doping of said p-type GaN layer is activated.

11. The method of claim 1 wherein said step of introducing said selected metal includes depositing NiO using one of reactive evaporation and reactive sputtering, said depositing being followed by steps of:

depositing conductive material; and

annealing said NiO and conductive material in an environment that is substantially free of H₂, wherein p-doping of said p-type GaN layer is activated.

12. The method of claim 1 further comprising a step of forming at least one patterned electrically conductive layer on said oxidized selected metal.

13. The method of claim 12 further comprising a step of diffusing said at least one patterned electrically conductive layer through said oxidized selected metal.

23. The method of claim 12, further comprising a step of diffusing said at least one patterned electrically conductive layer through said oxidized selected metal, wherein said patterned electrically conductive layer has a series of openings.

14. A method of forming a light-transmissive contact of a light source comprising steps of:

forming at least one layer of p-type GaN as one layer of an optoelectronic device;

forming first and second contact layers on said p-type GaN layer such that said contact layers include at least one of Ni, a transition metal and a Group II metal and include a highly conductive metal; and

forming an oxidizing environment and exposing said first and second contact layers to said oxidizing environment, including introducing water vapor and oxygen gas into said oxidizing environment to oxidize said at least one of Ni, a transition metal and said Group II metal and to diffuse said highly conductive metal into said p-type GaN layer, said water vapor being introduced in a concentration greater about 40% relative humidity.

15. The method of claim 14 wherein said step of forming said oxidizing environment includes introducing said water vapor to a flow of dry air and includes heating said oxidizing environment to a temperature substantially exceeding 550°

C., such that p-doping of said p-type GaN layer is activated.

16. The method of claim 15 wherein said step of forming said oxidizing environment includes providing oxygen in a non-reactive gas.

17. The method of claim 16 wherein said step of forming said first and second contact layers includes forming a first contact layer of Ni and a second contact layer of Au.

18. The method of claim 14 further comprising forming a third contact layer of Ni prior to said step of forming an oxidizing environment, such that a multi-layer structure of Ni/Au/Ni is formed.

19. A method of forming a contact structure of a light source comprising steps of:

forming at least one layer of p-type GaN as one layer of an optoelectronic device;

forming first and second contact layers on said p-type GaN layer such that said contact layers include at least one of Ni, a transition metal and a Group II metal and include a highly conductive metal; and

forming an oxidizing environment and exposing said first and second contact layers to said oxidizing environment, including introducing water vapor and oxygen gas into said oxidizing environment to oxidize said at least one of Ni, a transition metal and said Group II metal and to diffuse said highly conductive metal into said p-type GaN layer, said water vapor being introduced in a concentration greater than about 40% relative humidity, said oxidizing environment being heated to a temperature substantially exceeding 550°

C., such that p-doping of said p-type GaN layer is activated.

20. The method of claim 19 wherein said step of forming said oxidizing environment includes providing oxygen in a non-reactive gas.

21. The method of claim 20 wherein said step of forming said first and second contact layers includes forming a first contact layer of Ni and a second contact layer of Au.

22. The method of claim 19 further comprising forming a third contact layer of Ni prior to said step of forming an oxidizing environment, such that a multi-layer structure of Ni/Au/Ni is formed.