Optoelectronic semiconductor devices

• US 6,288,415 B1
• Filed: 09/24/1999
• Issued: 09/11/2001
• Est. Priority Date: 10/24/1996
• Status: Expired due to Fees

• Current Assignee: University of Surrey
• Original Assignee: University of Surrey
• Inventors: Harry, Milton Anthony, Leong, Daniel, Reeson Kirkby, Karen Joy, Homewood, Kevin
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US09/297,115
• Time in Patent Office: 718 Days
• Field of Search: 257/94, 257/96, 257/103, 257/84, 257/85, 257/183, 257/184, 257/185, 257/86, 257/87, 438/46, 438/47, 438/93, 438/94
• US Class Current: 257/94
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/0033 having Schottky barriers
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (β-FeSi₂). The LED produces electroluminescence at a wavelength of about 1.5 μm. Photodetector devices are also described

Claims

1. An optoelectronic semiconductor device comprising a junction formed, at least in part, from a layer of indirect band gap semiconductor material, wherein said layer includes a photoactive region in which, in operation of the device, electron-hole pairs are either created or combined, said photoactive region containing a direct band gap semiconductor material, being separate from said junction and defining an energy gap equal to or smaller than the energy gap of the indirect band gap semiconductor material.

2. An optoelectronic semiconductor device as claimed in claim 1 in the form of a photoemitter.

3. An optoelectronic semiconductor device as claimed in claim 2 wherein said photoemitter is a light emitting diode (LED).

4. An optoelectronic semiconductor device as claimed in claim 1 in the form of a photodetector.

5. An optoelectronic semiconductor device as claimed in claim 4 wherein the photodetector is a photodiode.

6. An optoelectronic semiconductor device as claimed in claim 1 wherein said direct band gap semiconductor material has the form of isolated precipitates or microcrystals.

7. An optoelectronic semiconductor device as claimed in claim 6 wherein said isolated precipitates or microcrystals have dimensions of the order of fifty to several hundred nanometres.

8. An optoelectronic semiconductor device as claimed in claim 1 wherein said direct band gap semiconductor material forms a continuous layer or a series of continuous layers.

9. An optoelectronic semiconductor device as claimed in claim 1 wherein said direct band gap semiconductor material is beta-iron disilicide (β

-FeSi₂).

10. An optoelectronic semiconductor device as claimed in claim 9 wherein said β

-FeSi₂ is unalloyed or alloyed, or undoped or doped.

11. An optoelectronic semiconductor device as claimed in claim 10 wherein said β

-FeSi₂ is alloyed with one or more of cobalt, germanium, indium and aluminium.

12. An optoelectronic semiconductor device as claimed in claim 2 wherein said junction is a p-n junction formed by a layer of p-type indirect band gap semiconductor material and a layer of n-type indirect band gap semiconductor material.

13. An optoelectronic semiconductor device as claimed in claim 12 wherein said photoactive region is situated as close as possible to, but wholly outside the depletion layer prevailing when a forward bias is being applied across the junction.

14. An optoelectronic semiconductor device as claimed in claim 12 wherein said p-n junction is a silicon p-n junction.

15. An optoelectronic semiconductor device as claimed in claim 12 wherein said p-n junction is a non-silicon homojunction or a heterojunction formed from indirect band gap semiconductor materials.

16. An optoelectronic semiconductor device as claimed in claim 2 wherein said junction is formed by a layer of indirect band gap semiconductor material and a metallic layer defining a Schottky barrier, and said photoactive region is situated in said layer of indirect band gap semiconductor material.

17. An optoelectronic semiconductor device as claimed in claim 16 wherein said photoactive region is situated outside the depletion layer.

18. An optoelectronic semiconductor device as claimed in claim 16 wherein said indirect band gap semiconductor material is either n-type material or p-type material.

19. An optoelectronic semiconductor device as claimed in claim 18 wherein said indirect band gap semiconductor material is silicon.

20. An optoelectronic semiconductor device as claimed in claim 5 wherein said photodiode is an avalanche photodiode, said junction being a p-n junction formed by a layer of p-type indirect band gap semiconductor material and a layer of n-type indirect band gap semiconductor material, and said photoactive region being situated in one or the other of said n- and p-type layers outside the depletion layer.

21. An optoelectronic semiconductor device as claimed in claim 20 wherein said p-n junction is a silicon p-n junction.

22. An optoelectronic semiconductor device as claimed in claim 20 wherein said junction is a non-silicon homojunction or a heterojunction formed from indirect band gap semiconductor materials.

23. An optoelectronic semiconductor device as claimed in claim 5 wherein said photodiode is a depletion-layer photodiode.

24. An optoelectronic semiconductor device as claimed in claim 23 wherein said depletion-layer photodiode is a p-i-n photodiode.

25. An optoelectronic semiconductor device as claimed in claim 24 wherein said junction is formed by a layer of intrinsic indirect band gap semiconductor material sandwiched between a layer of p-type indirect band gap semiconductor material and a layer of n-type indirect band gap semiconductor material, and said photoactive region is situated in said layer of intrinsic indirect band gap semiconductor material.

26. An optoelectronic semiconductor device as claimed in claim 24 wherein said p-i-n junction is a silicon p-i-n junction.

27. An optoelectronic semiconductor device as claimed in claim 24 wherein said p-i-n junction is a non-silicon homojunction or a heterojunction formed from indirect band gap semiconductor materials.

28. An optoelectronic semiconductor device as claimed in claim 23 wherein said depletion-layer photodiode is a Schottky photodiode.

29. An optoelectronic semiconductor device as claimed in claim 28 wherein said junction is formed by a layer of indirect band gap semiconductor material and a metallic layer defining a Schottky barrier, and said photoactive layer is situated in said layer of indirect band gap semiconductor material, inside the depletion layer.

30. An optoelectronic semiconductor device as claimed in claim 29 wherein said indirect band gap semiconductor material is either n-type material or p-type material.

31. An optoelectronic semiconductor device as claimed in claim 30 wherein said indirect band gap semiconductor material is silicon.

32. An optoelectronic semiconductor device as claimed in claim 23 wherein said depletion-layer photodiode is a solar cell, said junction being a p-n junction formed by a layer of p-type indirect band gap semiconductor material and a layer of n-type indirect band gap semiconductor material, and said photoactive region is situated within the depletion layer of the junction.

33. An optoelectronic semiconductor device as claimed in claim 32 wherein said p-n junction is a silicon p-n junction.

34. An optoelectronic semiconductor device as claimed in claim 32 wherein said p-n junction is a non-silicon homojunction or a heterojunction formed from indirect band gap semiconductor materials.

35. An optoelectronic semiconductor device as claimed in claim 4 wherein said photodetector is a bipolar junction transistor comprising layers of p- and -n type indirect band gap semiconductor material defining the transistor emitter, base and collector regions, said photoactive region being situated in the base region.

36. An optoelectronic semiconductor device as claimed in claim 35 wherein said bipolar junction is a silicon junction.

37. An optoelectronic semiconductor device as claimed in claim 35 wherein said bipolar junction is a non-silicon homojunction or a heterojunction formed from indirect band gap semiconductor materials.

38. An optoelectronic semiconductor device as claimed in claim 12 wherein said direct band gap semiconductor material is β

-FeSi₂.

39. An optoelectronic semiconductor device as claimed in claim 38 wherein said β

-FeSi₂ is doped or undoped, or alloyed or unalloyed.

40. An optoelectronic semiconductor device as claimed in claim 38 wherein said β

-FeSi₂ is in the form of isolated precipitates or microcrystals.

41. An optoelectronic semiconductor device as claimed in claim 38 wherein said β

-FeSi₂ is in the form of a continuous layer or series of layers.

42. A laser incorporating a photoemitter as claimed in claim 12.

43. A method for producing an optoelectronic semiconductor device including a junction, the method including the steps of, forming a layer of an indirect band gap semiconductor material defining part of said junction, and providing in said layer a photoactive region, containing a direct band gap semiconductor material which has an energy gap equal to or smaller than that of the indirect band gap semiconductor material, wherein the said photoactive region is separate from said junction and during operation of the device, electron-hole pairs are either created or combined in said photoactive region.

44. A method as claimed in claim 43 including preforming the junction by a growth technique such as molecular beam epitaxy and providing said direct band gap semiconductor material by ion implantation.

45. A method as claimed in claim 43 including producing the device in its entirety by an ion beam implantation process.

46. A method as claimed in claim 43 including producing the device in its entirety by molecular beam epitaxy.