Plasma enhanced chemical vapor deposition system

• US 6,289,842 B1
• Filed: 06/18/1999
• Issued: 09/18/2001
• Est. Priority Date: 06/22/1998
• Status: Expired due to Term

• Current Assignee: Structured Materials Industries Incorporated
• Original Assignee: Structured Materials Industries Incorporated
• Inventors: Tompa, Gary Steven
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US09/335,662
• Time in Patent Office: 823 Days
• Field of Search: 118/723.E, 118/723.ER, 118/723.I, 118/723.IR, 118/723.R, 118/715, 156/345, 204/298.07, 204/298.33
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32522 Temperature

Abstract

A Metal Organic Chemical Vapor Deposition (MOCVD) system particularly suitable for use at low deposition pressures and high or low temperatures. The system includes a reactor chamber having a reactant gas distribution unit (showerhead) which may be height adjustable having a temperature control chamber, for controlling the temperature of the reactants, a chamber for providing a uniform flow of carrier gas and a gas distribution chamber which includes baffling which can preclude gas phase mixing of the reactants. The gas distribution unit also includes an integral plasma generating electrode system for providing plasma enhanced deposition with controlled distribution of reactants. Also located in the reactor chamber is a temperature control unit for heating and/or cooling the wafers and a non-levitating rotating wafer carrier.

Claims

1. A system for effecting chemical vapor deposition upon a substrate of one or more reactant gases carried by at least one carrier gas comprising:

a) a reactor housing sealed against the atmosphere;

b) a gas distribution housing for receiving a plurality of pipes through which the reactant and carrier gases flow;

c) a temperature control chamber located within said distribution housing and coupled to an external source of temperature controlled fluid, said pipes carrying said reactant and carrier gases passing through said temperature control chamber so that the temperature of the gases flowing therethrough is affected by the temperature control fluid;

d) a diffusion chamber located within said distribution housing and connected to the carrier gas, said diffusion chamber having a gas permeable wall through which the carrier gas will flow so as to impart a uniform flow a the carrier gas over the area of the chamber;

e) a reactant distribution chamber located beneath the gas permeable wall of the diffusion chamber, said distribution chamber being connected to the pipes carrying the reactant gases, said distribution chamber being sub-divided by means of baffle means, said baffle means precluding mixing of said selected ones of the reactant gases within said reactant distribution chamber;

f) a conductive porous mesh located beneath said distribution chamber;

g) an electrode located within said distribution housing and being electrically connected to said conductive porous mesh and a source of RF for generating a plasma from one or more of the reactant gases;

h) a substrate carrier for mounting said substrate in proximity to the gas distribution housing; and

i) a temperature control unit for heating or cooling the substrate carried by the substrate carrier.

2. The chemical vapor deposition system as claimed in claim 1, wherein the substrate carrier includes a unit for rotating the substrate during deposition.

3. The chemical vapor deposition system as claimed in claim 2, wherein the temperature control unit comprises an RF heating unit.

4. The chemical vapor deposition system as claimed in claim 3, wherein the substrate carrier includes a latching device to prevent levitation of the substrate when subject to RF heating.

5. The chemical vapor deposition system as claimed in claim 4, wherein the latching device for preventing levitation of the substrate when subject to RF heating comprises a centrifugally operated clamp which is activated when the substrate carrier is rotating and which is deactivated when the substrate carrier is not rotating.

6. The chemical vapor deposition system as claimed in claim 2, wherein the temperature control unit comprises means for circulating cooled fluids.

7. The chemical vapor deposition system as claimed in claim 1, wherein the reactor housing is constructed with a double wall and includes a fluid circulation unit for circulating temperature control fluid within said double walls.

8. The chemical vapor deposition system as claimed in claim 1, wherein the distance between the substrate carrier and the gas distribution housing is adjustable.

9. The chemical vapor deposition system as claimed in claim 1, wherein the reactor housing includes a cylindrical side wall and an upper wall having an aperture therein, a generally annular insulating sleeve disposed in said aperture of said upper wall, a portion of said distribution housing extending through said annular sleeve, and seals disposed between said insulating sleeve and said portion of said distribution housing extending through said annular sleeve.

10. The chemical vapor deposition system as claimed in claim 9, wherein the seals comprise resilient O-rings.

11. A distribution unit for at least first and second reactant gases and at least one carrier gas in a CVD system comprising:

a) a distribution housing for receiving a plurality of pipes through which the reactant and carrier gases flow;

b) a temperature control chamber located within said distribution housing and coupled to an external source of temperature controlled fluid, said pipes carrying said reactant and carrier gases passing through said temperature control chamber so that the temperature of the gases flowing therethrough is affected by the temperature control fluid;

c) a diffusion chamber located within said distribution housing and connected to s source of carrier gas, said diffusion chamber having a gas permeable wall through which the carrier gas will flow so as to impart a uniform flow of the carrier gas;

d) a reactant distribution chamber located beneath the gas permeable wall of the diffusion chamber, said distribution chamber being connected to the pipes carrying the reactant gases,

e) a conductive porous mesh located beneath said distribution chamber;

f) an electrode located within said distribution housing and being electrically connected to said conductive porous mesh and a source of RF for generating a plasma from one or more of the reactant gases.

12. The distribution unit as claimed in claim 11 wherein said reactant gas distribution chamber includes at least one baffle, said baffle sub-dividing said reactant distribution chamber to preclude mixing of said first and second reactant gases therewithin.

13. The distribution unit as claimed in claim 12 wherein said at least one baffle comprises at least two concentric circular walls.

14. The distribution unit as claimed in claim 12 wherein said at least one baffle comprises at least two walls extending radially outwardly.

15. The distribution unit as claimed in claim 11 further including a manifold section through which said pipes are routed.

16. The distribution unit as claimed in claim 11 wherein the distribution housing is cylindrical and includes an upper portion and a lower portion, the lower portion being of a smaller diameter than the upper portion containing said chambers.