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Plasma reactor

  • US 6,290,806 B1
  • Filed: 03/24/1997
  • Issued: 09/18/2001
  • Est. Priority Date: 04/16/1993
  • Status: Expired due to Fees
First Claim
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1. A plasma etch reactor comprising:

  • an etch chamber defined at least in part by cylindrical sidewalls;

    a plasma source in communication with said etch chamber for generating and supplying a plasma to said etch chamber;

    a wafer chuck for receiving a wafer, the wafer chuck disposed concentrically between the cylindrical sidewalls;

    a radio-frequency voltage source electrically coupled between the wafer chuck and the cylindrical sidewalls of the etch chamber to provide an electric field in the etch chamber between a wafer placed on the wafer chuck and said sidewalls; and

    a dielectric ring comprising an upright inner radial wall disposed in adjacent, concentric and external relationship to a circumference of a wafer placed on the wafer chuck, and extending substantially perpendicularly above a plane defined by an upper surface of the wafer.

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