Sputter deposition utilizing pulsed cathode and substrate bias power

• US 6,290,821 B1
• Filed: 03/23/2000
• Issued: 09/18/2001
• Est. Priority Date: 07/15/1999
• Status: Expired due to Term

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: McLeod, Paul Stephen
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/533,696
• Time in Patent Office: 544 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.16
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence

Abstract

A method for depositing on a substrate surface a thin film layer comprising a target material comprises providing a cathode including a target having a sputtering surface comprised of the target material, with the target sputtering surface facing the substrate surface with a space therebetween, and sputtering the target material onto the substrate surface by applying a plurality of negative voltage pulses to the cathode while simultaneously applying a bias voltage to the substrate. Embodiments include depositing thin film layers onto static or moving substrates and application of constant or time-varying substrate bias voltage. The invention finds particular utility in the formation of high purity layers in the automated manufacture of magnetic data/information storage and retrieval media.

Claims

1. A method of manufacturing a magnetic recording medium comprising a substrate and a layer stack comprising a plurity of layers formed on a deposition surface of said substrate, said layer stack including, in order from said substrate deposition surface, a polycrystalline underlayer, a magnetic recording layer, and a proctective overcoat layer, which method comprised steps of:

(a) providing a said substrate including a said deposition surface;

(b) providing at least first, second, and third cathodes including target sputtering surfaces respectively comprised of first, second, and third target materials for forming said layer stack on said substrate deposition surface; and

(c) successively sputter depositing layers of said at least first, second, and third target materials over said substrate deposition surface to form said layer stack, each of said at least first, second, and third target materials being sputtered at a high rate by applying a plurality of negative voltage pulses to the respective cathode while simultaneously applying a bias voltage to the substrate, said sputter depositing including applying to each of said at least said first, second, and third cathodes a sufficient number of negative voltage pulses of sufficient power to perform high rate deposition of a desired thickness of each of said layers.

2. The method as in claim 1, wherein:

step (c) comprises maintaining said substrate static during each successive sputter deposition, with the target sputtering surface of the respective cathode facing said substrate deposition surface with a space therebetween.

3. The method as in claim 2, wherein:

step (c) comprises applying positive or negative bias voltage pulses to said substrate.

4. The method as in claim 2, wherein:

step (c) comprises applying to said substrate first bias voltage pulses during said applying of said negative voltage pulses to the respective cathode and applying to said substrate second, different bias voltage pulses during intervals when said negative voltage pulses are not applied to the respective cathode.

5. The method as in claim 4, wherein:

step (c) comprises applying to the respective substrate first and second bias voltage pulses which differ in voltage and/or polarity.

6. The method as in claim 1, wherein:

step (a) comprises providing a disk-shaped substrate.

7. The method as in claim 1, wherein:

step (a) comprises providing a substrate wherein said deposition surface thereof moves sequentially past each target sputtering surface; and

step (c) comprises applying to each cathode a sufficient number of negative voltage pulses of sufficient power to sputter deposit a layer of desired thickness on said substrate deposition surface during the interval when said substrate deposition surface moves past the respective target sputtering surface.

8. The method as in claim 7, wherein:

step (c) comprises applying positive or negative bias voltage pulses to said substrate.

9. The method as in claim 6, wherein:

step (c) comprises applying to said substrate first bias voltage pulses during said applying of negative voltage pulses to said cathode and applying to said substrate second, different bias voltage pulses during intervals when said negative voltage pulses ate not applied to said cathode.

10. The method as in claim 9, wherein:

step (c) comprises applying to said substrate first and second bias voltage pulses which differ in voltage and/or polarity.

11. A method of sputter depositing on a substrate surface a magnetic recording medium comprised of a stacked plurality of layers of different materials, comprising:

(a) providing a substrate having a deposition surface; and

(b) sputter depositing said stacked plurality of layers of different materials on said substrate deposition surface utilizing a sputter deposition apparatus including a plurality of sputtering targets respectively corresponding to the different materials of said stacked plurality of layers, said sputter deposition apparatus including means for applying to each of said plurality of sputtering targets a sufficient number of negative voltage pulses of sufficient power to perform high rate deposition of each of said layers on said substrate at a desired thickness while simultaneously applying a bias voltage to said substrate.

12. The method as in claim 11, wherein:

step (a) comprises providing a disk-shaped substrate.