Flash memory cell with self-aligned gates and fabrication process
First Claim
Patent Images
1. In a process of fabricating a semiconductor device having a floating gate, a control gate and a select gate, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a dielectric film on the first silicon layer;
forming a second silicon layer on the dielectric film;
etching away a portion of the second silicon layer to form a control gate;
using the control gate as a mask, anisotropically etching away portions of the dielectric film and the first silicon layer to form a floating gate beneath the control gate;
forming a third silicon layer over the substrate and the control gate with a step in the third silicon layer beside and above the control gate; and
anisotropically etching the third silicon layer to form a select gate beside the control gate.
9 Assignments
0 Petitions
Accused Products
Abstract
Nonvolatile memory cell and process in which a control gate or a thick dielectric film is used as a mask in the formation of a floating gate and also as a step in the formation and alignment of a select gate. The floating gate is relatively thin and has a side wall with a rounded curvature which, in some embodiments, serves as a tunneling window for electrons migrating to the select gate during erase operations. In other embodiments, the gate oxide beneath the floating gate is relatively thin, and the electrons tunnel through the gate oxide to the source region in the substrate below.
98 Citations
19 Claims
-
1. In a process of fabricating a semiconductor device having a floating gate, a control gate and a select gate, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a dielectric film on the first silicon layer;
forming a second silicon layer on the dielectric film;
etching away a portion of the second silicon layer to form a control gate;
using the control gate as a mask, anisotropically etching away portions of the dielectric film and the first silicon layer to form a floating gate beneath the control gate;
forming a third silicon layer over the substrate and the control gate with a step in the third silicon layer beside and above the control gate; and
anisotropically etching the third silicon layer to form a select gate beside the control gate. - View Dependent Claims (2, 3, 4, 5, 8, 9, 10, 11)
- forming an oxide layer in an active area on a silicon substrate;
-
6. In a process of fabricating a semiconductor device having a floating gate, a control gate and a select gate, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a dielectric film on the first silicon layer;
forming a second silicon layer on the dielectric film;
etching away a portion of the second silicon layer to form a control gate;
using the control gate as a mask, anisotropically etching away portions of the dielectric film and the first silicon layer to form a floating gate beneath the control gate;
forming a third silicon layer over the substrate and the control gate with a step in the third silicon layer beside and above the control gate;
anisotropically etching the third silicon layer to form a select gate beside the control gate;
forming a nitride layer on the third silicon layer; and
anisotropically removing the nitride everywhere except in a shoulder area of the step in the third silicon layer.
- forming an oxide layer in an active area on a silicon substrate;
-
7. In a process of fabricating a semiconductor device having a floating gate, a control gate and a select gate, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a dielectric film on the first silicon layer;
forming a second silicon layer on the dielectric film;
etching away a portion of the second silicon layer to form a control gate;
using the control gate as a mask, anisotropically etching away portions of the dielectric film and the first silicon layer to form a floating gate beneath the control gate;
forming a third silicon layer over the substrate and the control gate with a step in the third silicon layer beside and above the control gate;
anisotropically etching the third silicon layer to form a select gate beside the control gate;
forming an additional oxide layer on the third silicon layer; and
anisotropically removing the additional layer everywhere except in a shoulder area of the step in the third silicon layer.
- forming an oxide layer in an active area on a silicon substrate;
-
12. In a process of fabricating a semiconductor device, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a relatively thick dielectric film above the first silicon layer;
anisotropically etching the relatively thick dielectric film to form a step above the active area;
using the step as a mask, anisotropically etching the first silicon layer to form a floating gate above the active area;
forming a second silicon layer over the substrate and the step; and
anisotropically etching the second silicon layer to form a select gate beside the floating gate. - View Dependent Claims (13, 14, 15, 16, 17)
- forming an oxide layer in an active area on a silicon substrate;
-
18. In a process of fabricating a semiconductor device, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a dielectric film on the first silicon layer;
forming a second silicon layer on the dielectric film;
forming a dielectric film on the second silicon layer;
etching away a portion of the second silicon layer and the dielectric film on it to form a control gate;
forming a thermal oxide on side walls of the control gate;
using the control gate and the oxide on its side walls as a mask, anisotropically etching away portions of the dielectric film and the first silicon layer to form a floating gate beneath the control gate, with edge portions of the floating gate projecting beyond the side walls of the control gate;
forming a rounded curvature on the side walls of the projecting portions of the floating gate by thermal oxidation;
forming a third silicon layer over the substrate and the control gate with a step in the third silicon layer beside and above the control gate; and
anisotropically etching the third silicon layer to form a select gate which is self-aligned with the control gate and the floating gate.
- forming an oxide layer in an active area on a silicon substrate;
-
19. In a process of fabricating a semiconductor device, the steps of:
- forming an oxide layer in an active area on a silicon substrate;
forming a first silicon layer on the oxide layer;
forming a relatively thick dielectric film above the first silicon layer;
anisotropically etching the relatively thick dielectric film to form a step above the active area;
using the step as a mask, anisotropically etching the first silicon layer to form a floating gate above the active area;
forming a rounded curvature on the side wall of the floating gate by thermal oxidation;
forming a second silicon layer over the substrate and the step; and
anisotropically etching the second silicon layer to form a select gate which is self-aligned to the floating gate.
- forming an oxide layer in an active area on a silicon substrate;
Specification